Infineon Technologies BAT1705WH6327XTSA1
- Part Number:
- BAT1705WH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2435193-BAT1705WH6327XTSA1
- Description:
- DIODE SCHOTTKY 4V 130MA SOT323
- Datasheet:
- BAT1705WH6327XTSA1
Infineon Technologies BAT1705WH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BAT1705WH6327XTSA1.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Diode Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.10.00.60
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBAT17-05
- Pin Count3
- Number of Elements2
- Max Current Rating130mA
- Power Dissipation-Max150mW
- Element ConfigurationDual
- Diode TypeSchottky - 1 Pair Common Cathode
- Forward Current130mA
- Halogen FreeHalogen Free
- Forward Voltage340mV
- Max Repetitive Reverse Voltage (Vrrm)4V
- Capacitance @ Vr, F0.75pF @ 0V 1MHz
- Frequency BandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
- Resistance @ If, F15Ohm @ 5mA 10kHz
- Diode Capacitance-Max0.75pF
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BAT1705WH6327XTSA1 Overview
A forward voltage higher than 340mV is recommended for systems.
BAT1705WH6327XTSA1 Features
BAT1705WH6327XTSA1 Applications
There are a lot of Infineon Technologies
BAT1705WH6327XTSA1 applications of RF diodes.
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
UHF mixer
Sampling circuits
A forward voltage higher than 340mV is recommended for systems.
BAT1705WH6327XTSA1 Features
BAT1705WH6327XTSA1 Applications
There are a lot of Infineon Technologies
BAT1705WH6327XTSA1 applications of RF diodes.
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
UHF mixer
Sampling circuits
BAT1705WH6327XTSA1 More Descriptions
Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, ROHS COMPLIANT PACKAGE-3
DIODE, SCHOTTKY, 4V, 0.13A, SOT-323; Diode Configuration: Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max: 4V; Forward Current If(AV): 130mA; Forward Voltage VF Max: 600mV; Forward Surge Current Ifsm Max: -; Operating Temperature Max: 125°C; Diode Case Style: SOT-323; No. of Pins: 3Pins; Product Range: BAT17 Series; Automotive Qualification Standard: -; SVHC: No SVHC (27-Jun-2018)
Silicon Schottky Diodes | Summary of Features: For mixer applications in VHF/UHF range; For high-speed switching application; Pb-free (RoHS compliant) package | Target Applications: Wireless Communications; Satellite Receivers; Base Stations; High Speed Data Networks
DIODE, SCHOTTKY, 4V, 0.13A, SOT-323; Diode Configuration: Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max: 4V; Forward Current If(AV): 130mA; Forward Voltage VF Max: 600mV; Forward Surge Current Ifsm Max: -; Operating Temperature Max: 125°C; Diode Case Style: SOT-323; No. of Pins: 3Pins; Product Range: BAT17 Series; Automotive Qualification Standard: -; SVHC: No SVHC (27-Jun-2018)
Silicon Schottky Diodes | Summary of Features: For mixer applications in VHF/UHF range; For high-speed switching application; Pb-free (RoHS compliant) package | Target Applications: Wireless Communications; Satellite Receivers; Base Stations; High Speed Data Networks
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