BAS40LT3G

ON Semiconductor BAS40LT3G

Part Number:
BAS40LT3G
Manufacturer:
ON Semiconductor
Ventron No:
2826636-BAS40LT3G
Description:
DIODE SCHOTTKY 40V 120MA SOT23-3
ECAD Model:
Datasheet:
BAS40LT3G

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Specifications
ON Semiconductor BAS40LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAS40LT3G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Diode Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • HTS Code
    8541.10.00.70
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BAS40L
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    0.225W
  • Element Configuration
    Single
  • Speed
    Small Signal =< 200mA (Io), Any Speed
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    1μA @ 25V
  • Voltage - Forward (Vf) (Max) @ If
    1V @ 40mA
  • Forward Current
    120mA
  • Max Reverse Leakage Current
    1μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    600mA
  • Output Current-Max
    0.12A
  • Halogen Free
    Halogen Free
  • Current - Average Rectified (Io)
    120mA DC
  • Forward Voltage
    1V
  • Max Reverse Voltage (DC)
    40V
  • Average Rectified Current
    120mA
  • Max Repetitive Reverse Voltage (Vrrm)
    40V
  • Capacitance @ Vr, F
    5pF @ 1V 1MHz
  • Peak Non-Repetitive Surge Current
    600mA
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BAS40LT3G Overview
A maximum reverse leakage current of 1μA volts is produced by this device.This device has an average rectified current of 120mA volts.Forward current is allowed to reach a value of zero.Surge currents can be used up to 600mA.The maximum output current is 0.12A.

BAS40LT3G Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 120mA volts
0.12A is the maximum value


BAS40LT3G Applications
There are a lot of ON Semiconductor
BAS40LT3G applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
BAS40LT3G More Descriptions
Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.12A, 40V V(RRM), Silicon, TO-236AB
Rectifier Diode Schottky 0.12A 3-Pin SOT-23 T/R
DIODE SCHOTTKY 40V 120MA SOT23-3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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