ON Semiconductor BAS40LT1G
- Part Number:
- BAS40LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2421191-BAS40LT1G
- Description:
- DIODE SCHOTTKY 40V 120MA SOT23-3
- Datasheet:
- BAS40LT1G
ON Semiconductor BAS40LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAS40LT1G.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Diode Element MaterialSILICON
- PackagingCut Tape (CT)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.10.00.70
- Capacitance5pF
- SubcategoryRectifier Diodes
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating5A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBAS40L
- Pin Count3
- Number of Elements1
- PolarityStandard
- Element ConfigurationSingle
- SpeedSmall Signal =< 200mA (Io), Any Speed
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr1μA @ 25V
- Power Dissipation225mW
- Output Current120mA
- Voltage - Forward (Vf) (Max) @ If1V @ 40mA
- Forward Current120mA
- Max Reverse Leakage Current1μA
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current600mA
- Halogen FreeHalogen Free
- Breakdown Voltage40V
- Current - Average Rectified (Io)120mA DC
- Forward Voltage1V
- Max Reverse Voltage (DC)40V
- Average Rectified Current120mA
- Peak Reverse Current1μA
- Max Repetitive Reverse Voltage (Vrrm)40V
- Capacitance @ Vr, F5pF @ 1V 1MHz
- Peak Non-Repetitive Surge Current600mA
- Max Forward Surge Current (Ifsm)200mA
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BAS40LT1G Overview
Reverse leakage current from this device is 1μA volts at its maximum.For this device, the average rectified current is 120mA volts.Electronic or electrical devices produce heat as unwelcome byproducts of their primary functions.In this case, forward current can reach 120mA.As you can see, the fuse's current rating is 5A, which means that it can carry a maximum current for an indefinite period without losing too much performance.Phase diode rectifier is possible to use a surge current of maximum value 600mA.Capacitance can cause the device to deliver a value of 5pF.Based on the data chart, the peak reverse is 1μA.A diode's breakdown voltage specifies the largest reverse voltage that can be applied without significantly increasing the leakage current, which is 40V.
BAS40LT1G Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 120mA volts
a current rating of 5A
the peak reverse is 1μA
the breakdown voltage of a diode is 40V
BAS40LT1G Applications
There are a lot of ON Semiconductor
BAS40LT1G applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
Reverse leakage current from this device is 1μA volts at its maximum.For this device, the average rectified current is 120mA volts.Electronic or electrical devices produce heat as unwelcome byproducts of their primary functions.In this case, forward current can reach 120mA.As you can see, the fuse's current rating is 5A, which means that it can carry a maximum current for an indefinite period without losing too much performance.Phase diode rectifier is possible to use a surge current of maximum value 600mA.Capacitance can cause the device to deliver a value of 5pF.Based on the data chart, the peak reverse is 1μA.A diode's breakdown voltage specifies the largest reverse voltage that can be applied without significantly increasing the leakage current, which is 40V.
BAS40LT1G Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 120mA volts
a current rating of 5A
the peak reverse is 1μA
the breakdown voltage of a diode is 40V
BAS40LT1G Applications
There are a lot of ON Semiconductor
BAS40LT1G applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
BAS40LT1G More Descriptions
Diode Schottky 40V 0.12A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
BAS40LT1G Series 40 V 600 mA Surface Mount Schottky Barrier Diode - SOT-23-3
Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.12A, 40V V(RRM), Silicon, TO-236AB
Diode Schottky 0.12A Automotive 3-Pin SOT-23 T/R
Diode, Schottky Barrier, Switching, Vr 40V, If 120mA, Pkg SOT-23 (TO-236AB),Vf 380mV | ON Semiconductor BAS40LT1G
DIODE SCHOTTKY 40V 120MA SOT23-3
Rectifier, Schottky, 0.12A, 40V, Sot-23; Diode Configuration:Single; Repetitive Peak Reverse Voltage:40V; Average Forward Current:120Ma; Forward Voltage Max:1V; Forward Surge Current:200Ma; Operating Temperature Max:150°C Rohs Compliant: Yes |Onsemi BAS40LT1G.
These Schottky barrier diodes are designed for high speed switching applications circuit protection and voltage clamping. Extremely low forward voltage red conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
BAS40LT1G Series 40 V 600 mA Surface Mount Schottky Barrier Diode - SOT-23-3
Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.12A, 40V V(RRM), Silicon, TO-236AB
Diode Schottky 0.12A Automotive 3-Pin SOT-23 T/R
Diode, Schottky Barrier, Switching, Vr 40V, If 120mA, Pkg SOT-23 (TO-236AB),Vf 380mV | ON Semiconductor BAS40LT1G
DIODE SCHOTTKY 40V 120MA SOT23-3
Rectifier, Schottky, 0.12A, 40V, Sot-23; Diode Configuration:Single; Repetitive Peak Reverse Voltage:40V; Average Forward Current:120Ma; Forward Voltage Max:1V; Forward Surge Current:200Ma; Operating Temperature Max:150°C Rohs Compliant: Yes |Onsemi BAS40LT1G.
These Schottky barrier diodes are designed for high speed switching applications circuit protection and voltage clamping. Extremely low forward voltage red conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
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