ON Semiconductor BAS20LT1G

Name: BAS20LT1G
Brand: ON Semiconductor
SKU: 2420368-BAS20LT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BAS20LT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2420368-BAS20LT1G

Description:: DIODE GEN PURP 200V 200MA SOT23

ECAD Model:

Datasheet:: BAS20LT1G

Specifications

ON Semiconductor BAS20LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAS20LT1G.

Lifecycle Status
ACTIVE (Last Updated: 3 hours ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.10.00.70
Capacitance
5pF
Subcategory
Rectifier Diodes
Technology
SCHOTTKY
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BAS20
Pin Count
3
Number of Elements
1
Element Configuration
Single
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Standard
Current - Reverse Leakage @ Vr
100nA @ 150V
Power Dissipation
385mW
Output Current
200mA
Voltage - Forward (Vf) (Max) @ If
1.25V @ 200mA
Forward Current
200mA
Max Reverse Leakage Current
100nA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
625mA
Halogen Free
Halogen Free
Current - Average Rectified (Io)
200mA DC
Forward Voltage
1.25V
Max Reverse Voltage (DC)
200V
Average Rectified Current
200mA
Reverse Recovery Time
50 ns
Peak Reverse Current
100nA
Max Repetitive Reverse Voltage (Vrrm)
200V
Capacitance @ Vr, F
5pF @ 0V 1MHz
Peak Non-Repetitive Surge Current
625mA
Max Forward Surge Current (Ifsm)
625mA
Recovery Time
50 ns
Height
1.016mm
Length
3.0226mm
Width
1.397mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BAS20LT1G Overview
In this device, the maximum reverse leakage current is 100nA volts.The average rectified current for this device is 200mA volts.The primary action of this electronic or electrical device produces no heat as an unwanted side effect.When the forward current reaches 200mA, it is allowed.The maximum surge current is 625mA.This device can deliver a value of 5pF depending on the capacitance.A data chart shows that the peak reverse is 100nA in the datasheets.

BAS20LT1G Features
a maximal reverse leakage current of 100nA volts
an average rectified current of 200mA volts
the peak reverse is 100nA

BAS20LT1G Applications
There are a lot of ON Semiconductor
BAS20LT1G applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BAS20LT1G More Descriptions

Rectifier Diode Small Signal Switching 200V 0.2A 50ns 3-Pin SOT-23 T/R
Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.07A, 70V V(RRM), Silicon, TO-236AB
BAS20LT1G Series 200 V 200 mA High Voltage Switching Diode - SOT-23-3
Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(Av):200Ma; Forward Voltage Vf Max:1.25V; Reverse Recovery Time Trr Max:50Ns; Forward Surge Current Ifsm Max:625Ma; Diode Case Style:Sot-23 Rohs Compliant: Yes |Onsemi BAS20LT1G.
DIODE, SIGNAL, 200V, SOT-23; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 200V; Forward Current If(AV): 200mA; Forward Voltage VF Max: 1.25V; Reverse Recovery Time trr Max: 50ns; Forward Surge Current Ifsm Max: 625mA; Operating Temperature Max: 150°C; Diode Case Style: SOT-23; No. of Pins: 3Pins; Product Range: BAS20 Series; Automotive Qualification Standard: AEC-Q101; SVHC: No SVHC (27-Jun-2018); Current If @ Vf: 200mA; Current Ifsm: 625mA; Device Marking: BAS20; Junction Temperature Tj Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: 1(A), 2(N/C), 3(K); Power Dissipation Ptot Max: 385mW; Reverse Recovery Time trr Typ: 50ns; Reverse Voltage Vr Max: 200V; Termination Type: Surface Mount Device

Product Comparison

The three parts on the right have similar specifications to BAS20LT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Diode Element Material

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Capacitance

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Power Dissipation

Output Current

Voltage - Forward (Vf) (Max) @ If

Forward Current

Max Reverse Leakage Current

Operating Temperature - Junction

Max Surge Current

Halogen Free

Current - Average Rectified (Io)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Recovery Time

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Terminal Finish

JESD-30 Code

Operating Temperature (Max)

Configuration

Power Dissipation-Max

Output Current-Max

Voltage - DC Reverse (Vr) (Max)

Mount

Additional Feature

View Compare
BAS20LT1G

ON Semiconductor

ACTIVE (Last Updated: 3 hours ago)

4 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

Cut Tape (CT)

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

8541.10.00.70

5pF

Rectifier Diodes

SCHOTTKY

DUAL

GULL WING

260

40

BAS20

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

100nA @ 150V

385mW

200mA

1.25V @ 200mA

200mA

100nA

-55°C~150°C

625mA

Halogen Free

200mA DC

1.25V

200V

200mA

50 ns

100nA

200V

5pF @ 0V 1MHz

625mA

625mA

50 ns

1.016mm

3.0226mm

1.397mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
BAS21W,115

Nexperia USA Inc.

-

4 Weeks

-

Surface Mount

SC-70, SOT-323

YES

-

SILICON

Tape & Reel (TR)

e3

-

Active

1 (Unlimited)

3

-

-

-

-

-

-

-

DUAL

GULL WING

-

-

BAS21W

3

1

-

Fast Recovery =< 500ns, > 200mA (Io)

Standard

100nA @ 200V

-

-

1.25V @ 200mA

225mA

-

150°C Max

-

-

225mA DC

-

-

-

50ns

-

-

2pF @ 0V 1MHz

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

Automotive, AEC-Q101

Tin (Sn)

R-PDSO-G3

150°C

SINGLE

0.2W

0.225A

250V

-

-

BAS20LT1G vs BAS21W,115
BAS21TR

SMC Diode Solutions

-

8 Weeks

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

Tape & Reel (TR)

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Small Signal =< 200mA (Io), Any Speed

Standard

100nA @ 200V

-

-

1.25V @ 200mA

-

-

-65°C~150°C

-

-

200mA

-

-

-

50ns

-

-

5pF @ 0V 1MHz

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

200V

-

-

BAS20LT1G vs BAS21TR
BAS21WQ-7-F

Diodes Incorporated

-

19 Weeks

-

Surface Mount

SC-70, SOT-323

-

-

SILICON

Tape & Reel (TR)

e3

-

Active

1 (Unlimited)

3

EAR99

-

-

8541.10.00.70

-

-

-

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

-

1

-

Small Signal =< 200mA (Io), Any Speed

Standard

100nA @ 200V

-

-

1.25V @ 200mA

-

-

-65°C~150°C

-

-

-

-

200V

200mA

50 ns

-

-

5pF @ 0V 1MHz

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

Automotive, AEC-Q101

Matte Tin (Sn)

R-PDSO-G3

150°C

SINGLE

0.2W

0.2A

200V

Surface Mount

HIGH RELIABILITY

BAS20LT1G vs BAS21WQ-7-F