ON Semiconductor BAS16TT1G

Name: BAS16TT1G
Brand: ON Semiconductor
SKU: 2824728-BAS16TT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BAS16TT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2824728-BAS16TT1G

Description:: DIODE GEN PURP 100V 200MA SC75

ECAD Model:

Datasheet:: BAS16TT1G

Specifications

ON Semiconductor BAS16TT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAS16TT1G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
2 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.10.00.70
Subcategory
Rectifier Diodes
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BAS16
Pin Count
3
Number of Elements
1
Element Configuration
Single
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Standard
Current - Reverse Leakage @ Vr
1μA @ 75V
Power Dissipation
225mW
Output Current
200mA
Voltage - Forward (Vf) (Max) @ If
1.25V @ 150mA
Forward Current
200mA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
500mA
Halogen Free
Halogen Free
Current - Average Rectified (Io)
200mA DC
Forward Voltage
1.25V
Max Reverse Voltage (DC)
100V
Average Rectified Current
200mA
Reverse Recovery Time
6 ns
Peak Reverse Current
1μA
Max Repetitive Reverse Voltage (Vrrm)
75V
Capacitance @ Vr, F
2pF @ 0V 1MHz
Peak Non-Repetitive Surge Current
500mA
Max Forward Surge Current (Ifsm)
500mA
Recovery Time
6 ns
Height
900μm
Length
1.65mm
Width
900μm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BAS16TT1G Overview
There is an average rectified current of 200mA volts for this device.This electronic or electrical device produces 225mW heat as an unwanted derivative of its primary action.The allowable value of forward current reaches 200mA.Its current rating is 200mA, which is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element. 500mA is the maximum value of surge current that can be used.In the datasheets, the peak reverse is 1μA, as indicated by the data chart.

BAS16TT1G Features
an average rectified current of 200mA volts
a current rating of 200mA
the peak reverse is 1μA

BAS16TT1G Applications
There are a lot of ON Semiconductor
BAS16TT1G applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BAS16TT1G More Descriptions

Rectifier Diode Small Signal Switching 0.2A 6ns 3-Pin SOT-416 T/R
Rectifier Diode, 1 Phase, 1 Element, 0.2A, 75V V(RRM), Silicon
BAS16TT1 Series 75 V 200 mA Surface Mount Silicon Switching Diode - SOT-416
SWITCHING DIODE, 75V, 0.2A, SOT-416; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 100V; Forward Current If(AV): 200mA; Forward Voltage VF Max: 1.25V; Reverse Recovery Time trr Max: 6ns; Forward Surge Current Ifsm Max: 500mA; Operating Temperature Max: 150°C; Diode Case Style: SOT-416; No. of Pins: 3Pins; Product Range: -; Automotive Qualification Standard: -; SVHC: No SVHC (27-Jun-2018)

Product Comparison

The three parts on the right have similar specifications to BAS16TT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Power Dissipation

Output Current

Voltage - Forward (Vf) (Max) @ If

Forward Current

Operating Temperature - Junction

Max Surge Current

Halogen Free

Current - Average Rectified (Io)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Recovery Time

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Weight

Series

Output Current-Max

Max Power Dissipation

Max Reverse Leakage Current

View Compare
BAS16TT1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

2 Weeks

Tin

Surface Mount

SC-75, SOT-416

YES

3

SILICON

Tape & Reel (TR)

2004

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

8541.10.00.70

Rectifier Diodes

DUAL

GULL WING

260

200mA

40

BAS16

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

1μA @ 75V

225mW

200mA

1.25V @ 150mA

200mA

-55°C~150°C

500mA

Halogen Free

200mA DC

1.25V

100V

200mA

6 ns

1μA

75V

2pF @ 0V 1MHz

500mA

500mA

6 ns

900μm

1.65mm

900μm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
BAS16-HE3-18

Vishay Semiconductor Diodes Division

-

15 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

Tape & Reel (TR)

2016

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

8541.10.00.70

-

DUAL

GULL WING

260

-

10

-

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

1μA @ 75V

-

-

1.25V @ 150mA

150mA

-55°C~150°C

-

-

-

1.25V

75V

150mA

6 ns

-

75V

4pF @ 0V 1MHz

2A

-

-

-

-

-

-

-

ROHS3 Compliant

-

Surface Mount

8.788352mg

Automotive, AEC-Q101

0.15A

-

-

BAS16TT1G vs BAS16-HE3-18
BAS116TT1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Tin

Surface Mount

SC-75, SOT-416

YES

3

SILICON

Tape & Reel (TR)

-

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

-

Rectifier Diodes

DUAL

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

BAS116

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

5nA @ 75V

-

-

1.25V @ 150mA

200mA

-55°C~150°C

500mA

Halogen Free

-

-

75V

200mA

3 μs

5nA

75V

2pF @ 0V 1MHz

-

-

3 μs

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

0.2A

360mW

80nA

BAS16TT1G vs BAS116TT1G
BAS16-G3-08

Vishay Semiconductor Diodes Division

-

15 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

Tape & Reel (TR)

2014

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

8541.10.00.70

-

DUAL

GULL WING

260

-

10

-

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

1μA @ 75V

-

-

1.25V @ 150mA

150mA

-55°C~150°C

-

-

-

-

75V

150mA

6 ns

-

75V

4pF @ 0V 1MHz

2A

-

-

-

-

-

-

-

ROHS3 Compliant

-

Surface Mount

8.107964mg

Automotive, AEC-Q101

0.15A

-

-

BAS16TT1G vs BAS16-G3-08