ON Semiconductor BAS116LT1G

Name: BAS116LT1G
Brand: ON Semiconductor
SKU: 2421186-BAS116LT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BAS116LT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2421186-BAS116LT1G

Description:: DIODE GEN PURP 75V 200MA SOT23-3

ECAD Model:

Datasheet:: BAS116LT1G

Specifications

ON Semiconductor BAS116LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAS116LT1G.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
5 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Packaging
Cut Tape (CT)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.10.00.70
Capacitance
2pF
Subcategory
Rectifier Diodes
Voltage - Rated DC
75V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BAS116
Pin Count
3
Number of Elements
1
Element Configuration
Single
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Standard
Current - Reverse Leakage @ Vr
5nA @ 75V
Power Dissipation
300mW
Output Current
200mA
Voltage - Forward (Vf) (Max) @ If
1.25V @ 150mA
Forward Current
200mA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
500mA
Halogen Free
Halogen Free
Current - Average Rectified (Io)
200mA DC
Forward Voltage
1.25V
Max Reverse Voltage (DC)
75V
Average Rectified Current
200mA
Reverse Recovery Time
3 μs
Peak Reverse Current
5nA
Max Repetitive Reverse Voltage (Vrrm)
75V
Capacitance @ Vr, F
2pF @ 0V 1MHz
Peak Non-Repetitive Surge Current
500mA
Max Forward Surge Current (Ifsm)
500mA
Recovery Time
3 μs
Height
1.016mm
Length
3.0226mm
Width
1.397mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BAS116LT1G Overview
The average rectified current for this device is 200mA volts.The primary action of this electronic or electrical device produces no heat as an unwanted side effect.When the forward current reaches 200mA, it is allowed.Electrical and electronic devices produce the least 225mW heat (energy loss).Having a current rating of 200mA, it can carry an indefinite amount of current without deterioration.The maximum surge current is 500mA.This device can deliver a value of 2pF depending on the capacitance.A data chart shows that the peak reverse is 5nA in the datasheets.

BAS116LT1G Features
an average rectified current of 200mA volts
the least amount of 225mW heat (energy loss)
a current rating of 200mA
the peak reverse is 5nA

BAS116LT1G Applications
There are a lot of ON Semiconductor
BAS116LT1G applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BAS116LT1G More Descriptions

Rectifier Diode Small Signal Switching 0.2A 3000ns 3-Pin SOT-23 T/R
BAS116LT1G Series 75 V 200 mA Surface Mount Switching Diode - SOT-23-3
Diode,Schottky Barrier,Switching,Vr 75VDC,If 200mA,Pkg SOT-23 (TO-236AB),Trr 3us
Rectifier Diode, 1 Phase, 1 Element, 0.2A, 75V V(RRM), Silicon, TO-236
75V -55¡Í~ 150¡Í@(Tj) 300mW Single 1.25V@150mA 3us 5nA@75V 200mA SOT-23 Switching Diode ROHS
Switching Diode, 75V, 200Ma, Sot-23; Diode Configuration:Single; Repetitive Peak Reverse Voltage:75V; Average Forward Current:200Ma; Forward Voltage Max:1.25V; Reverse Recovery Time:3Μs; Forward Surge Current:500Ma; No. Of Pins:3Pinsrohs Compliant: Yes |Onsemi BAS116LT1G

Product Comparison

The three parts on the right have similar specifications to BAS116LT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Capacitance

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Power Dissipation

Output Current

Voltage - Forward (Vf) (Max) @ If

Forward Current

Operating Temperature - Junction

Max Surge Current

Halogen Free

Current - Average Rectified (Io)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Recovery Time

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Weight

Series

Output Current-Max

Max Reverse Leakage Current

View Compare
BAS116LT1G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

5 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

Cut Tape (CT)

2004

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

150°C

-55°C

8541.10.00.70

2pF

Rectifier Diodes

75V

225mW

DUAL

GULL WING

260

200mA

40

BAS116

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

5nA @ 75V

300mW

200mA

1.25V @ 150mA

200mA

-55°C~150°C

500mA

Halogen Free

200mA DC

1.25V

75V

200mA

3 μs

5nA

75V

2pF @ 0V 1MHz

500mA

500mA

3 μs

1.016mm

3.0226mm

1.397mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
BAS16-HE3-18

Vishay Semiconductor Diodes Division

-

15 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

Tape & Reel (TR)

2016

e3

yes

Active

1 (Unlimited)

3

-

EAR99

150°C

-55°C

8541.10.00.70

-

-

-

-

DUAL

GULL WING

260

-

10

-

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

1μA @ 75V

-

-

1.25V @ 150mA

150mA

-55°C~150°C

-

-

-

1.25V

75V

150mA

6 ns

-

75V

4pF @ 0V 1MHz

2A

-

-

-

-

-

-

-

ROHS3 Compliant

-

Surface Mount

8.788352mg

Automotive, AEC-Q101

0.15A

-

BAS116LT1G vs BAS16-HE3-18
BAS116TT1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Tin

Surface Mount

SC-75, SOT-416

YES

3

SILICON

Tape & Reel (TR)

-

e3

yes

Active

1 (Unlimited)

3

-

EAR99

150°C

-55°C

-

-

Rectifier Diodes

-

360mW

DUAL

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

BAS116

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

5nA @ 75V

-

-

1.25V @ 150mA

200mA

-55°C~150°C

500mA

Halogen Free

-

-

75V

200mA

3 μs

5nA

75V

2pF @ 0V 1MHz

-

-

3 μs

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

0.2A

80nA

BAS116LT1G vs BAS116TT1G
BAS16-G3-08

Vishay Semiconductor Diodes Division

-

15 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

Tape & Reel (TR)

2014

e3

yes

Active

1 (Unlimited)

3

-

EAR99

150°C

-55°C

8541.10.00.70

-

-

-

-

DUAL

GULL WING

260

-

10

-

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

1μA @ 75V

-

-

1.25V @ 150mA

150mA

-55°C~150°C

-

-

-

-

75V

150mA

6 ns

-

75V

4pF @ 0V 1MHz

2A

-

-

-

-

-

-

-

ROHS3 Compliant

-

Surface Mount

8.107964mg

Automotive, AEC-Q101

0.15A

-

BAS116LT1G vs BAS16-G3-08