Infineon Technologies BAR81WE6327BTSA1
- Part Number:
- BAR81WE6327BTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2436702-BAR81WE6327BTSA1
- Description:
- DIODE RF SGL 30V 100MA SOT-343
- Datasheet:
- BAR81WE6327BTSA1
Infineon Technologies BAR81WE6327BTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BAR81WE6327BTSA1.
- Package / CaseSC-82A, SOT-343
- Supplier Device PackagePG-SOT343-4
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberBAR81
- Power Dissipation-Max100mW
- Diode TypeStandard - Single
- Current - Max100mA
- Capacitance @ Vr, F0.9pF @ 3V 1MHz
- Voltage - Peak Reverse (Max)30V
- Resistance @ If, F1Ohm @ 5mA 100MHz
BAR81WE6327BTSA1 Overview
Operating from 100mA is the maximum current for this device.The maximum peak reverse voltage for this device is 30V, according to the applicable device specifications.
BAR81WE6327BTSA1 Features
from a maximum current of 100mA volts
BAR81WE6327BTSA1 Applications
There are a lot of Infineon Technologies
BAR81WE6327BTSA1 applications of RF diodes.
Radar systems for industrial use
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Operating from 100mA is the maximum current for this device.The maximum peak reverse voltage for this device is 30V, according to the applicable device specifications.
BAR81WE6327BTSA1 Features
from a maximum current of 100mA volts
BAR81WE6327BTSA1 Applications
There are a lot of Infineon Technologies
BAR81WE6327BTSA1 applications of RF diodes.
Radar systems for industrial use
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
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