Infineon Technologies BAR6306WH6327XTSA1
- Part Number:
- BAR6306WH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2438163-BAR6306WH6327XTSA1
- Description:
- DIODE RF SW 50V 100MA SOT323
- Datasheet:
- BAR6306WH6327XTSA1
Infineon Technologies BAR6306WH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BAR6306WH6327XTSA1.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Diode Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.10.00.80
- TechnologyPOSITIVE-INTRINSIC-NEGATIVE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBAR63-06
- Number of Elements2
- Max Current Rating100mA
- Power Dissipation-Max250mW
- Element ConfigurationDual
- Diode TypePIN - 1 Pair Common Anode
- Forward Current100mA
- Halogen FreeHalogen Free
- Reverse Recovery Time75 ns
- Capacitance @ Vr, F0.3pF @ 5V 1MHz
- Voltage - Peak Reverse (Max)50V
- Breakdown Voltage-Min50V
- Frequency BandS B
- Resistance @ If, F1Ohm @ 10mA 100MHz
- Minority Carrier Lifetime-Nom0.075 μs
- Diode Forward Resistance-Max2Ohm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BAR6306WH6327XTSA1 Overview
This device operates at a maximum peak reverse voltage of 50V according to its specifications.The breakdown voltage of this device may occasionally be as low as 50V.
BAR6306WH6327XTSA1 Features
at its lowest breakdown voltage of 50V
BAR6306WH6327XTSA1 Applications
There are a lot of Infineon Technologies
BAR6306WH6327XTSA1 applications of RF diodes.
Telematic systems
Compensators
Radar systems for industrial use
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
This device operates at a maximum peak reverse voltage of 50V according to its specifications.The breakdown voltage of this device may occasionally be as low as 50V.
BAR6306WH6327XTSA1 Features
at its lowest breakdown voltage of 50V
BAR6306WH6327XTSA1 Applications
There are a lot of Infineon Technologies
BAR6306WH6327XTSA1 applications of RF diodes.
Telematic systems
Compensators
Radar systems for industrial use
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
BAR6306WH6327XTSA1 More Descriptions
1 Pair Common Anode 50V SC-70(SOT-323) Diodes - General Purpose ROHS
PIN DIODE, 50V, 0.1A, SOT-23; Diode Configuration: Dual Common Anode; Resistance @ If: 1ohm; Breakdown Voltage Vbr: 50V; Diode Case Style: SOT-23; No. of Pins: 3 Pin; Total Capacitance Ct: 0.21pF; Forward Current If(AV): 100mA; Operating Temperature Max: 125°C; Product Range: BAR63 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Silicon PIN Diodes | Summary of Features: PIN diode for high speed switching of RF signals; Very low forward resistance (low insertion loss); Very low capacitance (high isolation); For frequencies up to 3GHz; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: Wireless Communications; High Speed Data Networks
PIN DIODE, 50V, 0.1A, SOT-23; Diode Configuration: Dual Common Anode; Resistance @ If: 1ohm; Breakdown Voltage Vbr: 50V; Diode Case Style: SOT-23; No. of Pins: 3 Pin; Total Capacitance Ct: 0.21pF; Forward Current If(AV): 100mA; Operating Temperature Max: 125°C; Product Range: BAR63 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Silicon PIN Diodes | Summary of Features: PIN diode for high speed switching of RF signals; Very low forward resistance (low insertion loss); Very low capacitance (high isolation); For frequencies up to 3GHz; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: Wireless Communications; High Speed Data Networks
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