NXP USA Inc. BAP64-02,115
- Part Number:
- BAP64-02,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2438168-BAP64-02,115
- Description:
- DIODE PIN 175V 100MA SOD-523
- ECAD Model:
-
- Datasheet:
- BAP64-02,115
NXP USA Inc. BAP64-02,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BAP64-02,115.
- Factory Lead Time13 Weeks
- Package / CaseSC-79, SOD-523
- Surface MountYES
- Diode Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTin (Sn)
- Additional FeatureHIGH VOLTAGE
- HTS Code8541.10.00.70
- SubcategoryPIN Diodes
- TechnologyPOSITIVE-INTRINSIC-NEGATIVE
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBAP64
- Pin Count2
- JESD-30 CodeR-PDSO-F2
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max715mW
- Diode TypePIN - Single
- ApplicationATTENUATOR; SWITCHING
- Current - Max100mA
- Capacitance @ Vr, F0.35pF @ 20V 1MHz
- Voltage - Peak Reverse (Max)175V
- Breakdown Voltage-Min175V
- Frequency BandS B
- Diode Capacitance-Nom0.48pF
- Resistance @ If, F1.35Ohm @ 100mA 100MHz
- Diode Capacitance-Max0.35pF
- Minority Carrier Lifetime-Nom1.55 µs
- Diode Res Test Current0.5mA
- Diode Res Test Frequency100MHz
- RoHS StatusROHS3 Compliant
BAP64-02,115 Overview
From 100mA, this device will operate.This device operates at a maximum reverse voltage of 175V based on the applicable device specifications.Sometimes, this device might run at its lowest breakdown voltage.
BAP64-02,115 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 175V
BAP64-02,115 Applications
There are a lot of NXP USA Inc.
BAP64-02,115 applications of RF diodes.
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
UHF mixer
Sampling circuits
From 100mA, this device will operate.This device operates at a maximum reverse voltage of 175V based on the applicable device specifications.Sometimes, this device might run at its lowest breakdown voltage.
BAP64-02,115 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 175V
BAP64-02,115 Applications
There are a lot of NXP USA Inc.
BAP64-02,115 applications of RF diodes.
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
UHF mixer
Sampling circuits
BAP64-02,115 More Descriptions
BAP64 Series 20 Ohm 0.35 pF 0 to 3 GHz Silicon Pin Diode Surface Mount - SOD-523
DIODE, PIN, 175V, 0.1A, SOD-523; Diode Configuration: Single; Resistance @ If: 0.7ohm; Breakdown Voltage Vbr: 175V; Diode Case Style: SOD-523; No. of Pins: 2 Pin; Total Capacitance Ct: 0.3; Available until stocks are exhausted
Rf Diode, Full Reel; Diode Configuration:Single; Resistance @ If:0.7Ohm; Reverse Voltage:175V; Diode Case Style:Sod-523; No. Of Pins:2 Pin; Diode Capacitance:0.35Pf; Forward Current:100Ma; Operating Temperature Max:150°C Rohs Compliant: Yes |Nxp BAP64-02,115
DIODE, PIN, 175V, 0.1A, SOD-523; Diode Configuration: Single; Resistance @ If: 0.7ohm; Breakdown Voltage Vbr: 175V; Diode Case Style: SOD-523; No. of Pins: 2 Pin; Total Capacitance Ct: 0.3; Available until stocks are exhausted
Rf Diode, Full Reel; Diode Configuration:Single; Resistance @ If:0.7Ohm; Reverse Voltage:175V; Diode Case Style:Sod-523; No. Of Pins:2 Pin; Diode Capacitance:0.35Pf; Forward Current:100Ma; Operating Temperature Max:150°C Rohs Compliant: Yes |Nxp BAP64-02,115
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PIN - Single 0.37pF @ 20V 1MHz -65°C~150°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SOD-882
-
PIN - 1 Pair Common Anode 0.35pF @ 20V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3
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