Infineon Technologies BA592E6327HTSA1
- Part Number:
- BA592E6327HTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2435192-BA592E6327HTSA1
- Description:
- DIODE RF SW 35V 100MA SOD-323
- Datasheet:
- BA592E6327HTSA1
Infineon Technologies BA592E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BA592E6327HTSA1.
- Factory Lead Time4 Weeks
- Package / CaseSC-76, SOD-323
- Surface MountYES
- Diode Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.10.00.60
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBA592
- JESD-30 CodeR-PDSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Diode TypeStandard - Single
- Current - Max100mA
- Capacitance @ Vr, F1.1pF @ 3V 1MHz
- Voltage - Peak Reverse (Max)35V
- Frequency BandVERY HIGH FREQUENCY
- Resistance @ If, F500mOhm @ 10mA 100MHz
- Diode Capacitance-Max1.4pF
- RoHS StatusROHS3 Compliant
BA592E6327HTSA1 Overview
RF diode operates at 100mA volts, which is the maximal current RF diode can handle.Device specifications specify a maximum reverse voltage of 35V for this device.
BA592E6327HTSA1 Features
from a maximum current of 100mA volts
BA592E6327HTSA1 Applications
There are a lot of Infineon Technologies
BA592E6327HTSA1 applications of RF diodes.
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
RF diode operates at 100mA volts, which is the maximal current RF diode can handle.Device specifications specify a maximum reverse voltage of 35V for this device.
BA592E6327HTSA1 Features
from a maximum current of 100mA volts
BA592E6327HTSA1 Applications
There are a lot of Infineon Technologies
BA592E6327HTSA1 applications of RF diodes.
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
BA592E6327HTSA1 More Descriptions
35 V 100 mA 500 mO 1.1 pF Silicon RF Switching Diode - SOD323-2
Silicon RF Switching Diode | Summary of Features: For band switching in TV/VTR tuners and mobile applications; Very low forward resistance (typ. 0.45 @ 3 mA); Small capacitance; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: Set Top Box; TV
DIODE, RF, PIN, SOD-323; Diode Type:RF; Forward Current If(AV):100mA; Operating Temperature Range:-55°C to 125°C; Diode Case Style:SOD-323; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SC-76; Capacitance Ct:0.92pF; Forward Voltage VF Max:1V; Package / Case:SOD-323; Reverse Voltage Vr Max:35V; Termination Type:SMD
Silicon RF Switching Diode | Summary of Features: For band switching in TV/VTR tuners and mobile applications; Very low forward resistance (typ. 0.45 @ 3 mA); Small capacitance; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: Set Top Box; TV
DIODE, RF, PIN, SOD-323; Diode Type:RF; Forward Current If(AV):100mA; Operating Temperature Range:-55°C to 125°C; Diode Case Style:SOD-323; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SC-76; Capacitance Ct:0.92pF; Forward Voltage VF Max:1V; Package / Case:SOD-323; Reverse Voltage Vr Max:35V; Termination Type:SMD
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