BA592E6327HTSA1

Infineon Technologies BA592E6327HTSA1

Part Number:
BA592E6327HTSA1
Manufacturer:
Infineon Technologies
Ventron No:
2435192-BA592E6327HTSA1
Description:
DIODE RF SW 35V 100MA SOD-323
ECAD Model:
Datasheet:
BA592E6327HTSA1

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Specifications
Infineon Technologies BA592E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BA592E6327HTSA1.
  • Factory Lead Time
    4 Weeks
  • Package / Case
    SC-76, SOD-323
  • Surface Mount
    YES
  • Diode Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.10.00.60
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BA592
  • JESD-30 Code
    R-PDSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Diode Type
    Standard - Single
  • Current - Max
    100mA
  • Capacitance @ Vr, F
    1.1pF @ 3V 1MHz
  • Voltage - Peak Reverse (Max)
    35V
  • Frequency Band
    VERY HIGH FREQUENCY
  • Resistance @ If, F
    500mOhm @ 10mA 100MHz
  • Diode Capacitance-Max
    1.4pF
  • RoHS Status
    ROHS3 Compliant
Description
BA592E6327HTSA1 Overview
RF diode operates at 100mA volts, which is the maximal current RF diode can handle.Device specifications specify a maximum reverse voltage of 35V for this device.

BA592E6327HTSA1 Features
from a maximum current of 100mA volts


BA592E6327HTSA1 Applications
There are a lot of Infineon Technologies
BA592E6327HTSA1 applications of RF diodes.


Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
BA592E6327HTSA1 More Descriptions
35 V 100 mA 500 mO 1.1 pF Silicon RF Switching Diode - SOD323-2
Silicon RF Switching Diode | Summary of Features: For band switching in TV/VTR tuners and mobile applications; Very low forward resistance (typ. 0.45 @ 3 mA); Small capacitance; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: Set Top Box; TV
DIODE, RF, PIN, SOD-323; Diode Type:RF; Forward Current If(AV):100mA; Operating Temperature Range:-55°C to 125°C; Diode Case Style:SOD-323; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SC-76; Capacitance Ct:0.92pF; Forward Voltage VF Max:1V; Package / Case:SOD-323; Reverse Voltage Vr Max:35V; Termination Type:SMD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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