NXP USA Inc. BA591,115

Name: BA591,115
Brand: NXP USA Inc.
SKU: 2435191-BA591,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BA591,115

Manufacturer:: NXP USA Inc.

Ventron No:: 2435191-BA591,115

Description:: DIODE BAND-SWITCHING 35V SOD323

ECAD Model:

Datasheet:: BA591,115

Specifications

NXP USA Inc. BA591,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BA591,115.

Factory Lead Time
8 Weeks
Package / Case
SC-76, SOD-323
Surface Mount
YES
Diode Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1995
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
HTS Code
8541.10.00.70
Subcategory
Varactors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BA591
Pin Count
2
JESD-30 Code
R-PDSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
500mW
Diode Type
Standard - Single
Current - Max
100mA
Capacitance @ Vr, F
0.9pF @ 3V 1MHz
Voltage - Peak Reverse (Max)
35V
Frequency Band
VERY HIGH FREQUENCY
Diode Capacitance-Nom
0.8pF
Resistance @ If, F
500mOhm @ 10mA 100MHz
Diode Capacitance-Max
1.05pF
RoHS Status
ROHS3 Compliant

Description

BA591,115 Overview
This device is designed to operate from the maximal current of 100mA.In accordance with the applicable device specifications, this device operates at a maximum peak reverse voltage of 35V.

BA591,115 Features
from a maximum current of 100mA volts

BA591,115 Applications
There are a lot of NXP USA Inc.
BA591,115 applications of RF diodes.

Sensor interfaces of security systems
Telematic systems
Compensators
Radar systems for industrial use
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables

BA591,115 More Descriptions

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Certification