Part Number: TEMT7000X01 vs TEMT1000
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number: | TEMT7000X01 | TEMT1000 |
| Manufacturer: | Vishay Semiconductor Opto Division | Vishay Semiconductor Opto Division |
| Description: | PHOTOTRANSISTOR 850NM SMD | PHOTOTRANSISTOR 950NM 1.9MM |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Factory Lead Time | 8 Weeks | 14 Weeks |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 0805 (2012 Metric) | 2-SMD, Z-Bend |
| Number of Pins | 2 | 2 |
| Shape | RECTANGULAR | - |
| Operating Temperature | -40°C~100°C TA | -40°C~85°C TA |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Published | 2009 | - |
| Pbfree Code | yes | - |
| Part Status | Active | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 3 (168 Hours) |
| Additional Feature | HIGH SENSITIVITY | - |
| Subcategory | Photo Transistors | - |
| Max Power Dissipation | 100mW | 100mW |
| Orientation | Top View | Top View |
| Number of Functions | 1 | - |
| Case Code (Metric) | 2012 | - |
| Case Code (Imperial) | 0805 | - |
| Polarity | NPN | NPN |
| Configuration | SINGLE | - |
| Number of Channels | 1 | 1 |
| Power Dissipation | 100mW | 100mW |
| Viewing Angle | 120° | 30° |
| Optoelectronic Device Type | PHOTO TRANSISTOR | - |
| Lens Style | Flat | Domed |
| Collector Emitter Voltage (VCEO) | 7V | 70V |
| Max Collector Current | 20mA | 50mA |
| Collector Emitter Breakdown Voltage | 20V | 70V |
| Power Consumption | 100mW | 100mW |
| Wavelength | 850nm | 950nm |
| Max Breakdown Voltage | 20V | 70V |
| Dark Current | 100μA | 200nA |
| Infrared Range | YES | - |
| Light Current-Nom | 0.45mA | - |
| Height | 850μm | 2.7mm |
| Length | 2mm | 2.5mm |
| Width | 1.25mm | 2mm |
| REACH SVHC | Unknown | Unknown |
| Radiation Hardening | No | No |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Contact Plating | - | Tin |
| Max Operating Temperature | - | 85°C |
| Min Operating Temperature | - | -40°C |
| Number of Elements | - | 1 |
| Power - Max | - | 100mW |
| Rise Time | - | 2μs |
| Fall Time (Typ) | - | 2.3 μs |
| Voltage - Collector Emitter Breakdown (Max) | - | 70V |
| Current - Collector (Ic) (Max) | - | 50mA |
| Collector Emitter Saturation Voltage | - | 300mV |
| Current - Dark (Id) (Max) | - | 200nA |
| Lead Free | - | Lead Free |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
 |
TEMT1030 | Vishay Semiconductor Opto Division | PHOTOTRANSISTOR 950NM 1.9MM | Compare |
|
TEMT1020 | Vishay Semiconductor Opto Division | PHOTOTRANSISTOR 880NM 1.9MM | Compare |
|
TEMT1040 | Vishay Semiconductor Opto Division | PHOTOTRANSISTOR SMD | Compare |
