Part Number: SE10FJHM3/H vs SE10DD-M3/I

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Part Number: SE10FJHM3/H SE10DD-M3/I
Manufacturer: Vishay Semiconductor Diodes Division Vishay Semiconductor Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB DIODE GEN PURP 200V 3A TO263AC
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 13 Weeks 14 Weeks
Mount Surface Mount Surface Mount
Mounting Type Surface Mount Surface Mount
Package / Case DO-219AB TO-263-3, D2Pak (2 Leads Tab) Variant
Diode Element Material SILICON SILICON
Packaging Tape & Reel (TR) Tape & Reel (TR)
Series Automotive, AEC-Q101 Automotive, AEC-Q101, eSMP®
Published 2017 2017
JESD-609 Code e3 e3
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 2 2
ECCN Code EAR99 EAR99
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Position DUAL SINGLE
Terminal Form FLAT GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Reach Compliance Code unknown unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
JESD-30 Code R-PDSO-F2 R-PSSO-G2
Operating Temperature (Max) 175°C 175°C
Number of Elements 1 1
Configuration SINGLE SINGLE
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard Standard
Current - Reverse Leakage @ Vr 5μA @ 600V 15μA @ 100V
Voltage - Forward (Vf) (Max) @ If 1.05V @ 1A 1.15V @ 10A
Operating Temperature - Junction -55°C~175°C -55°C~175°C
Output Current-Max 1A 3A
Voltage - DC Reverse (Vr) (Max) 600V 200V
Max Reverse Voltage (DC) 600V 200V
Average Rectified Current 1A 3A
Reverse Recovery Time 780 ns 3 μs
Capacitance @ Vr, F 7.5pF @ 4V 1MHz 67pF @ 4V 1MHz
RoHS Status ROHS3 Compliant ROHS3 Compliant
HTS Code - 8541.10.00.80
Case Connection - CATHODE
Application - GENERAL PURPOSE
Number of Phases - 1
JEDEC-95 Code - TO-263AC
Non-rep Pk Forward Current-Max - 110A
Reverse Current-Max - 15μA
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