| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
J175 |
J175,116 |
| Manufacturer: |
Fairchild/ON Semiconductor |
NXP USA Inc. |
| Description: |
JFET P-CH 30V 0.35W TO92 |
JFET P-CH 30V 0.4W TO92 |
| Quantity Available: |
Available |
Available |
| Datasheets: |
J174-77, MMBFJ175-77
J174 - J177
|
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|
| Voltage - Cutoff (VGS off) @ Id: |
3V @ 10nA |
- |
| Voltage - Breakdown (V(BR)GSS): |
30V |
- |
| Supplier Device Package: |
TO-92-3 |
- |
| Series: |
- |
- |
| Resistance - RDS(On): |
125 Ohm |
- |
| Power - Max: |
350mW |
- |
| Packaging: |
Bulk |
- |
| Package / Case: |
TO-226-3, TO-92-3 (TO-226AA) |
- |
| Operating Temperature: |
-55°C ~ 150°C (TJ) |
- |
| Mounting Type: |
Through Hole |
- |
| Input Capacitance (Ciss) (Max) @ Vds: |
- |
- |
| FET Type: |
P-Channel |
- |
| Drain to Source Voltage (Vdss): |
- |
- |
| Current - Drain (Idss) @ Vds (Vgs=0): |
7mA @ 15V |
- |
| Mounting Type |
- |
Through Hole |
| Package / Case |
- |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount |
- |
NO |
| Transistor Element Material |
- |
SILICON |
| Operating Temperature |
- |
150°C TJ |
| Packaging |
- |
Tape & Box (TB) |
| Published |
- |
1997 |
| JESD-609 Code |
- |
e3 |
| Part Status |
- |
Obsolete |
| Moisture Sensitivity Level (MSL) |
- |
1 (Unlimited) |
| Number of Terminations |
- |
3 |
| ECCN Code |
- |
EAR99 |
| Terminal Finish |
- |
Matte Tin (Sn) |
| HTS Code |
- |
8541.21.00.95 |
| Subcategory |
- |
FET General Purpose Small Signal |
| Terminal Position |
- |
BOTTOM |
| Terminal Form |
- |
WIRE |
| Peak Reflow Temperature (Cel) |
- |
NOT SPECIFIED |
| Reach Compliance Code |
- |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
- |
NOT SPECIFIED |
| Base Part Number |
- |
J175 |
| Pin Count |
- |
3 |
| JESD-30 Code |
- |
O-PBCY-W3 |
| Qualification Status |
- |
Not Qualified |
| Number of Elements |
- |
1 |
| Configuration |
- |
SINGLE |
| Operating Mode |
- |
DEPLETION MODE |
| Power - Max |
- |
400mW |
| FET Type |
- |
P-Channel |
| Transistor Application |
- |
SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
8pF @ 10V VGS |
| Drain-source On Resistance-Max |
- |
125Ohm |
| DS Breakdown Voltage-Min |
- |
30V |
| FET Technology |
- |
JUNCTION |
| Power Dissipation-Max (Abs) |
- |
0.4W |
| Current - Drain (Idss) @ Vds (Vgs=0) |
- |
7mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
- |
3V @ 10nA |
| Voltage - Breakdown (V(BR)GSS) |
- |
30V |
| Resistance - RDS(On) |
- |
125Ohm |
| RoHS Status |
- |
ROHS3 Compliant |
| Submit RFQ: |
Submit |
Submit |
