Part Number: APTGF530U120D4G vs APTGF150A120T3AG

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Part Number: APTGF530U120D4G APTGF150A120T3AG
Manufacturer: Microsemi Corporation Microsemi Corporation
Description: IGBT 1200V 700A 3900W D4 POWER MOD IGBT NPT PHASE LEG SP3
Quantity Available: Available Available
Datasheets: - APTGF150A120T3AG
Mount Chassis Mount, Screw Chassis Mount, Screw
Mounting Type Chassis Mount Chassis Mount
Package / Case D4 SP3
Number of Pins 5 20
Published 2012 -
Part Status Obsolete Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 4 10
ECCN Code EAR99 EAR99
Max Operating Temperature 150°C 150°C
Min Operating Temperature -40°C -40°C
Subcategory Insulated Gate BIP Transistors Insulated Gate BIP Transistors
Max Power Dissipation 3.9kW 1.041kW
Terminal Position UPPER UPPER
Terminal Form UNSPECIFIED UNSPECIFIED
Pin Count 5 25
JESD-30 Code R-XUFM-X4 R-XUFM-X10
Number of Elements 1 2
Configuration Single Half Bridge
Case Connection ISOLATED ISOLATED
Power - Max 3900W 1041W
Transistor Application MOTOR CONTROL POWER CONTROL
Polarity/Channel Type N-CHANNEL N-CHANNEL
Input Standard Standard
Collector Emitter Voltage (VCEO) 1.2kV 1.2kV
Max Collector Current 700A 210A
Current - Collector Cutoff (Max) 5mA 250μA
Collector Emitter Breakdown Voltage 1.2kV 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V 1200V
Input Capacitance 37nF 9.3nF
Turn On Time 180 ns 190 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 600A 3.7V @ 15V, 150A
Turn Off Time-Nom (toff) 600 ns 390 ns
IGBT Type NPT NPT
NTC Thermistor No Yes
Gate-Emitter Voltage-Max 20V -
Input Capacitance (Cies) @ Vce 37nF @ 25V 9.3nF @ 25V
VCEsat-Max 3.7 V 3.7 V
RoHS Status RoHS Compliant RoHS Compliant
Element Configuration - Dual
Radiation Hardening - No
Lead Free - Lead Free
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