Part Number: DTA144TMT2L vs DTA124EMT2L

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Part Number: DTA144TMT2L DTA124EMT2L
Manufacturer: Rohm Semiconductor Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW VMT3 TRANS PREBIAS PNP 150MW VMT3
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 13 Weeks 13 Weeks
Mount Surface Mount Surface Mount
Mounting Type Surface Mount Surface Mount
Package / Case SOT-723 SOT-723
Number of Pins 3 3
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 2006 2006
JESD-609 Code e2 e2
Pbfree Code yes yes
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 3 3
ECCN Code EAR99 EAR99
Terminal Finish TIN COPPER Tin/Copper (Sn/Cu)
Max Operating Temperature 150°C 150°C
Min Operating Temperature -55°C -55°C
Additional Feature BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.75 8541.21.00.75
Subcategory BIP General Purpose Small Signal BIP General Purpose Small Signal
Voltage - Rated DC -50V -50V
Max Power Dissipation 150mW 150mW
Terminal Position DUAL DUAL
Terminal Form FLAT FLAT
Peak Reflow Temperature (Cel) 260 260
Current Rating -100mA -30mA
Time@Peak Reflow Temperature-Max (s) 10 10
Base Part Number DTA144 DTA124
Pin Count 3 3
Number of Elements 1 1
Polarity PNP PNP
Element Configuration Single Single
Transistor Application SWITCHING SWITCHING
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V 300mV
Max Collector Current 100mA 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V 56 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA ICBO 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 5mA 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V 50V
Transition Frequency 250MHz 250MHz
Frequency - Transition 250MHz 250MHz
hFE Min 100 56
Resistor - Base (R1) 47 k Ω 22 k Ω
Radiation Hardening No No
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lead Free Lead Free Lead Free
Power Dissipation - 150mW
Max Breakdown Voltage - 50V
Continuous Collector Current - -100mA
Resistor - Emitter Base (R2) - 22 k Ω
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