Part Number: BCM847BV,315 vs BCM856SH6433XTMA1

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Part Number: BCM847BV,315 BCM856SH6433XTMA1
Manufacturer: Nexperia USA Inc. Infineon Technologies
Description: TRANS 2NPN 45V 0.1A SOT666 TRANS 2PNP 65V 0.1A SOT363
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 4 Weeks 26 Weeks
Contact Plating Tin -
Mount Surface Mount Surface Mount
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 6-VSSOP, SC-88, SOT-363
Number of Pins 6 -
Transistor Element Material SILICON SILICON
Operating Temperature 150°C TJ 150°C TJ
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 2009 2011
JESD-609 Code e3 -
Part Status Active Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 6 6
Max Power Dissipation 300mW 250mW
Terminal Form FLAT GULL WING
Peak Reflow Temperature (Cel) 260 -
Frequency 250MHz -
Time@Peak Reflow Temperature-Max (s) 30 -
Base Part Number BCM847 BCM856S
Pin Count 6 -
Number of Elements 2 2
Polarity NPN -
Power Dissipation 300mW -
Transistor Application AMPLIFIER AMPLIFIER
Transistor Type 2 NPN (Dual) Matched Pair 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 45V 650mV
Max Collector Current 100mA 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V 65V
Current - Collector (Ic) (Max) 100mA -
Transition Frequency 250MHz 250MHz
Collector Base Voltage (VCBO) 50V 80V
Emitter Base Voltage (VEBO) 6V -
Radiation Hardening No -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Pbfree Code - yes
JESD-30 Code - R-PDSO-G6
Configuration - SEPARATE, 2 ELEMENTS
Power - Max - 250mW
Polarity/Channel Type - PNP
Frequency - Transition - 250MHz
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