Part Number: PDTA114YK,115 vs PDTA115TM,315

Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product!
Part Number: PDTA114YK,115 PDTA115TM,315
Manufacturer: NXP USA Inc. Nexperia USA Inc.
Description: TRANS PREBIAS PNP 250MW SMT3 TRANS PREBIAS PNP 250MW SOT883
Quantity Available: Available Available
Datasheets: - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-101, SOT-883
Packaging Tape & Reel (TR) Tape & Reel (TR)
Part Status Obsolete Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Base Part Number PDTA114 PDTA115
Power - Max 250mW -
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA 5V 100 @ 1mA 5V
Current - Collector Cutoff (Max) 1μA 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA 150mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V -
Current - Collector (Ic) (Max) 100mA -
Resistor - Base (R1) 10 k Ω 100 k Ω
Resistor - Emitter Base (R2) 47 k Ω -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Factory Lead Time - 8 Weeks
Mount - Surface Mount
Number of Pins - 3
Published - 2009
JESD-609 Code - e3
Number of Terminations - 3
ECCN Code - EAR99
Terminal Finish - Tin (Sn)
Max Operating Temperature - 150°C
Min Operating Temperature - -65°C
Additional Feature - BUILT IN BIAS RESISTOR
Max Power Dissipation - 250mW
Terminal Position - BOTTOM
Peak Reflow Temperature (Cel) - 260
Time@Peak Reflow Temperature-Max (s) - 30
Pin Count - 3
Number of Elements - 1
Polarity - PNP
Element Configuration - Single
Case Connection - COLLECTOR
Transistor Application - SWITCHING
Collector Emitter Voltage (VCEO) - 50V
Max Collector Current - 100mA
Collector Emitter Breakdown Voltage - 50V
Max Breakdown Voltage - 50V
Radiation Hardening - No
Submit RFQ: Submit Submit