Part Number: MT8HTF12864HTZ-667H1 vs MT8HTF12864HDY-53EA3

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Part Number: MT8HTF12864HTZ-667H1 MT8HTF12864HDY-53EA3
Manufacturer: Micron Technology Inc. Micron Technology Inc.
Description: MODULE DDR2 SDRAM 1GB 200SODIMM MODULE DDR2 SDRAM 1GB 200SODIMM
Quantity Available: Available Available
Datasheets: - -
Package / Case 200-SODIMM 200-SODIMM
Surface Mount NO NO
Number of Pins 200 200
Published 2014 2010
JESD-609 Code e4 -
Part Status Obsolete Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours) 1 (Unlimited)
Number of Terminations 200 200
ECCN Code EAR99 -
Terminal Finish GOLD -
Additional Feature SELF CONTAINED REFRESH -
HTS Code 8542.32.00.36 -
Technology CMOS CMOS
Terminal Position ZIG-ZAG DUAL
Terminal Form NO LEAD NO LEAD
Number of Functions 1 -
Supply Voltage 1.8V 1.8V
Reach Compliance Code unknown unknown
Pin Count 200 -
Qualification Status Not Qualified Not Qualified
Operating Temperature (Max) 85°C 65°C
Operating Temperature (Min) -40°C -
Supply Voltage-Max (Vsup) 1.9V -
Temperature Grade INDUSTRIAL COMMERCIAL
Supply Voltage-Min (Vsup) 1.7V -
Memory Size 1GB 1GB
Number of Ports 1 -
Speed 667MT/s 533MT/s
Memory Type DDR2 SDRAM DDR2 SDRAM
Operating Mode SYNCHRONOUS -
Organization 128MX64 128MX64
Memory Width 64 64
Memory Density 8589934592 bit 8589934592 bit
Access Mode DUAL BANK PAGE BURST -
Height Seated (Max) 3.8mm -
Length 67.6mm -
Width 30mm -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Packaging - Bulk
Subcategory - DRAMs
Terminal Pitch - 0.6mm
Power Supplies - 1.8V
Clock Frequency - 267MHz
Supply Current-Max - 2mA
Output Characteristics - 3-STATE
Standby Current-Max - 0.04A
Access Time (Max) - 0.5 ns
I/O Type - COMMON
Refresh Cycles - 8192
Height - 30mm
Lead Free - Lead Free
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