Part Number: MT45W4MW16PBA-70 WT TR vs MT45W2MW16BGB-701 IT

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Part Number: MT45W4MW16PBA-70 WT TR MT45W2MW16BGB-701 IT
Manufacturer: Micron Technology Inc. Micron Technology Inc.
Description: IC PSRAM 64MBIT 70NS 48VFBGA IC PSRAM 32MBIT 70NS 54VFBGA
Quantity Available: Available Available
Datasheets: MT45W4MW16P MT45W2MW16BGB
Mounting Type Surface Mount Surface Mount
Package / Case 48-VFBGA 54-VFBGA
Operating Temperature -30°C~85°C TC -40°C~85°C TC
Packaging Tape & Reel (TR) Tray
Published 2005 2008
Part Status Discontinued Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year) 3 (168 Hours)
Technology PSRAM (Pseudo SRAM) PSRAM (Pseudo SRAM)
Voltage - Supply 1.7V~1.95V 1.7V~1.95V
Base Part Number MT45W4MW16 MT45W2MW16
Memory Size 64Mb 4M x 16 32Mb 2M x 16
Memory Type Volatile Volatile
Memory Format PSRAM PSRAM
Memory Interface Parallel Parallel
Write Cycle Time - Word, Page 70ns 70ns
RoHS Status ROHS3 Compliant ROHS3 Compliant
Surface Mount - YES
JESD-609 Code - e1
Pbfree Code - yes
Number of Terminations - 54
ECCN Code - 3A991.B.2.A
Terminal Finish - Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature - SYNCHRONOUS BURST MODE ALSO POSSIBLE
HTS Code - 8542.32.00.41
Subcategory - Other Memory ICs
Terminal Position - BOTTOM
Peak Reflow Temperature (Cel) - 260
Number of Functions - 1
Terminal Pitch - 0.75mm
Time@Peak Reflow Temperature-Max (s) - 30
Pin Count - 54
JESD-30 Code - R-PBGA-B54
Qualification Status - Not Qualified
Supply Voltage-Max (Vsup) - 1.95V
Power Supplies - 1.81.8/3.3V
Supply Voltage-Min (Vsup) - 1.7V
Operating Mode - ASYNCHRONOUS
Supply Current-Max - 0.04mA
Organization - 2MX16
Output Characteristics - 3-STATE
Memory Width - 16
Standby Current-Max - 0.00011A
Memory Density - 33554432 bit
Access Time (Max) - 70 ns
I/O Type - COMMON
Height Seated (Max) - 1mm
Length - 8mm
Width - 6mm
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