Part Number: R1LV1616RSD-5SI#S0 vs R1LV5256ESP-7SR#B0
Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! | ||
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Part Number: | R1LV1616RSD-5SI#S0 | R1LV5256ESP-7SR#B0 |
Manufacturer: | Renesas Electronics America | ON Semiconductor |
Description: | IC SRAM 16MBIT 55NS 52TSOP | Memory IC |
Quantity Available: | Available | Available |
Datasheets: | - | - |
Factory Lead Time | 20 Weeks | - |
Mounting Type | Surface Mount | Surface Mount |
Package / Case | 52-TFSOP (0.350, 8.89mm Width) | 28-SOIC (0.330, 8.40mm Width) |
Surface Mount | YES | - |
Number of Pins | 52 | - |
Operating Temperature | -40°C~85°C TA | 0°C~70°C TA |
Packaging | Tape & Reel (TR) | Tube |
Pbfree Code | yes | - |
Part Status | Obsolete | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 3 (168 Hours) |
Number of Terminations | 52 | - |
Technology | CMOS | SRAM |
Voltage - Supply | 2.7V~3.6V | 2.7V~3.6V |
Terminal Position | DUAL | - |
Terminal Pitch | 0.4mm | - |
Base Part Number | R1LV1616R | - |
Pin Count | 52 | - |
Qualification Status | Not Qualified | - |
Power Supplies | 3/3.3V | - |
Memory Size | 16Mb 2M x 8 1M x 16 | 256Kb 32K x 8 |
Memory Type | Volatile | Volatile |
Operating Mode | ASYNCHRONOUS | - |
Supply Current-Max | 0.04mA | - |
Memory Format | SRAM | SRAM |
Memory Interface | Parallel | Parallel |
Organization | 1MX16 | - |
Output Characteristics | 3-STATE | - |
Memory Width | 16 | - |
Write Cycle Time - Word, Page | 55ns | 70ns |
Standby Current-Max | 0.000006A | - |
Memory Density | 16777216 bit | - |
Access Time (Max) | 55 ns | - |
I/O Type | COMMON | - |
Standby Voltage-Min | 2V | - |
Alternate Memory Width | 8 | - |
RoHS Status | ROHS3 Compliant | Non-RoHS Compliant |
Supplier Device Package | - | 28-SOP |
Access Time | - | 70ns |
Submit RFQ: | Submit | Submit |