Part Number: IS61NLP25636A-200B2LI-TR vs IS61DDB24M18A-300M3L

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Part Number: IS61NLP25636A-200B2LI-TR IS61DDB24M18A-300M3L
Manufacturer: ISSI, Integrated Silicon Solution Inc ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 9MBIT 200MHZ 119BGA 165 Pin Memory IC 17mm mm
Quantity Available: Available Available
Datasheets: IS61N(LP,VP)yyyyyA -
Mounting Type Surface Mount Surface Mount
Package / Case 119-BBGA 165-LBGA
Surface Mount YES YES
Number of Pins 119 165
Operating Temperature -40°C~85°C TA 0°C~70°C TA
Packaging Tape & Reel (TR) Tray
Part Status Active Active
Moisture Sensitivity Level (MSL) 3 (168 Hours) 3 (168 Hours)
Number of Terminations 119 165
Technology SRAM - Synchronous, SDR SRAM - Synchronous, DDR II
Voltage - Supply 3.135V~3.465V 1.71V~1.89V
Terminal Position BOTTOM BOTTOM
Terminal Pitch 1.27mm 1mm
Operating Supply Voltage 3.3V -
Memory Size 9Mb 256K x 36 72Mb 4M x 18
Number of Ports 4 -
Memory Type Volatile Volatile
Clock Frequency 200MHz 300MHz
Supply Current-Max 0.28mA -
Access Time 3.1ns -
Memory Format SRAM SRAM
Memory Interface Parallel Parallel
Organization 256KX36 4MX18
Output Characteristics 3-STATE -
Memory Width 36 18
Address Bus Width 18b -
Density 9 Mb -
Standby Current-Max 0.05A -
I/O Type COMMON -
Radiation Hardening No -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Factory Lead Time - 12 Weeks
ECCN Code - 3A991.B.2.A
Additional Feature - PIPELINED ARCHITECTURE
HTS Code - 8542.32.00.41
Peak Reflow Temperature (Cel) - NOT SPECIFIED
Number of Functions - 1
Supply Voltage - 1.8V
Time@Peak Reflow Temperature-Max (s) - NOT SPECIFIED
Pin Count - 165
Supply Voltage-Max (Vsup) - 1.89V
Supply Voltage-Min (Vsup) - 1.71V
Memory Density - 75497472 bit
Access Time (Max) - 0.45 ns
Length - 17mm
Height Seated (Max) - 1.4mm
Width - 15mm
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