Part Number: MT29F1G01AAADDH4:D vs MT29AZ5A3CHHWD-18AAT.84F TR
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| Part Number: | MT29F1G01AAADDH4:D | MT29AZ5A3CHHWD-18AAT.84F TR |
| Manufacturer: | Micron Technology Inc. | Micron Technology Inc. |
| Description: | IC FLASH 1GBIT 50MHZ 63VFBGA | Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Factory Lead Time | 3 Weeks | - |
| Mount | Surface Mount | - |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 63-VFBGA | 162-VFBGA |
| Number of Pins | 63 | - |
| Supplier Device Package | 63-VFBGA (9x11) | - |
| Operating Temperature | 0°C~70°C TA | -40°C~105°C TA |
| Packaging | Bulk | Tape & Reel (TR) |
| Published | 2012 | - |
| Part Status | Obsolete | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 3 (168 Hours) |
| Max Operating Temperature | 70°C | - |
| Min Operating Temperature | 0°C | - |
| Technology | FLASH - NAND | FLASH - NAND, Mobile LPDRAM |
| Voltage - Supply | 2.7V~3.6V | 1.7V~1.9V |
| Base Part Number | MT29F1G01 | - |
| Operating Supply Voltage | 3.3V | - |
| Interface | SPI, Serial | - |
| Memory Size | 1Gb 1G x 1 | 4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2 |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | FLASH | FLASH, RAM |
| Memory Interface | SPI | Parallel |
| Density | 1 Gb | - |
| Sync/Async | Synchronous | - |
| Word Size | 1b | - |
| Radiation Hardening | No | - |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Series | - | Automotive, AEC-Q100 |
| Clock Frequency | - | 533MHz |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
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MT29AZ5A5CMGWD-18AAT.87C TR | Micron Technology Inc. | Memory IC | Compare |
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MT29AZ5A3CHHWD-18AAT.84F | Micron Technology Inc. | Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series | Compare |
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MT29AZ5A3CHHWD-18AIT.84F | Micron Technology Inc. | Memory IC | Compare |
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MT29AZ5A3CHHWD-18AIT.84F TR | Micron Technology Inc. | MASSFLASH/LPDDR2 6G | Compare |
