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Part Number: |
CY62146GE30-45BVXI |
CY62146GE30-45ZSXIT |
Manufacturer: |
Cypress Semiconductor Corp |
Cypress Semiconductor Corp |
Description: |
IC SRAM 4MBIT 45NS 48VFBGA |
MoBL® Memory IC MoBL® Series |
Quantity Available: |
Available |
Available |
Datasheets: |
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Factory Lead Time |
13 Weeks |
13 Weeks |
Mounting Type |
Surface Mount |
Surface Mount |
Package / Case |
48-VFBGA |
44-TSOP (0.400, 10.16mm Width) |
Surface Mount |
YES |
- |
Operating Temperature |
-40°C~85°C TA |
-40°C~85°C TA |
Packaging |
Tray |
Tape & Reel (TR) |
Published |
2012 |
- |
Series |
MoBL® |
MoBL® |
Part Status |
Active |
Active |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
3 (168 Hours) |
Number of Terminations |
48 |
- |
ECCN Code |
3A991.B.2.A |
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HTS Code |
8542.32.00.41 |
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Technology |
SRAM - Asynchronous |
SRAM - Asynchronous |
Voltage - Supply |
2.2V~3.6V |
2.2V~3.6V |
Terminal Position |
BOTTOM |
- |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
- |
Number of Functions |
1 |
- |
Supply Voltage |
3V |
- |
Terminal Pitch |
0.75mm |
- |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
- |
JESD-30 Code |
R-PBGA-B48 |
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Supply Voltage-Max (Vsup) |
3.6V |
- |
Supply Voltage-Min (Vsup) |
2.2V |
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Memory Size |
4Mb 256K x 16 |
4Mb 256K x 16 |
Memory Type |
Volatile |
Volatile |
Memory Format |
SRAM |
SRAM |
Memory Interface |
Parallel |
Parallel |
Organization |
256KX16 |
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Memory Width |
16 |
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Write Cycle Time - Word, Page |
45ns |
45ns |
Memory Density |
4194304 bit |
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Access Time (Max) |
45 ns |
- |
Height Seated (Max) |
1mm |
- |
Length |
8mm |
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Width |
6mm |
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RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
Submit RFQ: |
Submit |
Submit |