2N7002P,215

NXP 2N7002P,215

Part Number:
2N7002P,215
Manufacturer:
NXP
Ventron No:
6075825-2N7002P,215
Description:
ECAD Model:
Datasheet:
Discrete Semiconductor Selection Guide

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Specifications
NXP 2N7002P,215 technical specifications, attributes, parameters and parts with similar specifications to NXP 2N7002P,215.
  • Vgs(th) (Max) @ Id:
    2.4V @ 250µA
  • Vgs (Max):
    ±20V
  • Technology:
    MOSFET (Metal Oxide)
  • Supplier Device Package:
    TO-236AB (SOT23)
  • Series:
    -
  • Rds On (Max) @ Id, Vgs:
    1.6 Ohm @ 500mA, 10V
  • Power Dissipation (Max):
    350mW (Ta)
  • Packaging:
    Cut Tape (CT)
  • Package / Case:
    TO-236-3, SC-59, SOT-23-3
  • Other Names:
    1727-4692-1
    568-5818-1
    568-5818-1-ND
  • Operating Temperature:
    -55°C ~ 150°C (TJ)
  • Mounting Type:
    Surface Mount
  • Moisture Sensitivity Level (MSL):
    1 (Unlimited)
  • Lead Free Status / RoHS Status:
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds:
    50pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs:
    0.8nC @ 4.5V
  • FET Type:
    N-Channel
  • FET Feature:
    -
  • Drive Voltage (Max Rds On, Min Rds On):
    10V
  • Drain to Source Voltage (Vdss):
    60V
  • Detailed Description:
    N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB (SOT23)
  • Current - Continuous Drain (Id) @ 25°C:
    360mA (Ta)
Description
part#2N7002P,215, Manufacturer: is available at ventronchip.com, see description of 2N7002P,215 as below .use the request quote form to request 2N7002P,215 price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for 2N7002P,215 depending on the quantity required, availability and warehouse location.
2N7002P,215 More Descriptions
Transistor: N-MOSFET; unipolar; 60V; 360mA; 1.6ohm; 350mW; -55 150 deg.C; SMD; SOT23; AEC-Q100
60V 360mA 1.6¦¸@10V,500mA 350mW 2.4V@250¦ÌA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
2N7002P Series N-Channel 60 V 1.6 Ohm 350 mW 0.8 nC SMT TrenchMOS FET - SOT-23
Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET,N CH,60V,0.36A,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:360mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.75V; Power Dissipation Pd:420mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 360 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 1.6 / Gate-Source Voltage V = 20 / Fall Time ms = 5 / Rise Time ns = 4 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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