SEME-LAB 2N5681 technical specifications, attributes, parameters and parts with similar specifications to SEME-LAB 2N5681.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time12 Weeks
- Contact PlatingLead, Tin
- MountThrough Hole
- PackagingBulk
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeO-MBCY-W3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current1A
- JEDEC-95 CodeTO-5
- Transition Frequency30MHz
- Collector Base Voltage (VCBO)100V
- DC Current Gain-Min (hFE)5
- RoHS StatusNon-RoHS Compliant
2N5681 Overview
The part has a transition frequency of 30MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2N5681 Features
a transition frequency of 30MHz
2N5681 Applications
There are a lot of Microsemi Corporation
2N5681 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The part has a transition frequency of 30MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2N5681 Features
a transition frequency of 30MHz
2N5681 Applications
There are a lot of Microsemi Corporation
2N5681 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5681 More Descriptions
Transistor GP BJT NPN 100V 1A 3-Pin TO-39Avnet Japan
1000 mA 100 V NPN Si SMALL SIGNAL TRANSISTOR TO-39
TRANSISTOR,NPN,1A,100V,TO39; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: TO-39; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 30MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 200°C
Bipolar Transistor, Npn, 100V To-39; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:30Mhz Rohs Compliant: Yes |Multicomp Pro 2N5681
1000 mA 100 V NPN Si SMALL SIGNAL TRANSISTOR TO-39
TRANSISTOR,NPN,1A,100V,TO39; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: TO-39; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 30MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 200°C
Bipolar Transistor, Npn, 100V To-39; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:30Mhz Rohs Compliant: Yes |Multicomp Pro 2N5681
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