SEME-LAB 2N5430
- Part Number:
- 2N5430
- Manufacturer:
- SEME-LAB
- Ventron No:
- 5643314-2N5430
- Description:
- MEDIUM POWER NPN SILICON TRANSISTOR
- ECAD Model:
-
- Datasheet:
- Power Transistors, TO-66 Case
SEME-LAB 2N5430 technical specifications, attributes, parameters and parts with similar specifications to SEME-LAB 2N5430.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Number of Pins3
- Transistor Element MaterialSILICON
- PackagingBulk
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.29.00.95
- Max Power Dissipation40W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Polarity/Channel TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current7A
- JEDEC-95 CodeTO-66
- DC Current Gain-Min (hFE)60
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
2N5430 Overview
Collector current can be as low as 7A volts at its maximum.
2N5430 Features
2N5430 Applications
There are a lot of Microsemi Corporation
2N5430 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
Collector current can be as low as 7A volts at its maximum.
2N5430 Features
2N5430 Applications
There are a lot of Microsemi Corporation
2N5430 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5430 More Descriptions
Trans GP BJT NPN 100V 7A 40000mW 3-Pin(2 Tab) TO-66
Bipolar Transistors - BJT Power BJT
Power Bjt To-66 Rohs Compliant: Yes |Microchip 2N5430
Bipolar Transistors - BJT Power BJT
Power Bjt To-66 Rohs Compliant: Yes |Microchip 2N5430
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