2N2907

SIEMENS 2N2907

Part Number:
2N2907
Manufacturer:
SIEMENS
Ventron No:
5631233-2N2907
Description:
PNP SILICON PLANAR TRANSISTORS
ECAD Model:
Datasheet:
2N/FTSO/PN NPN Type (10p) 2N290(5,7)

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Specifications
SIEMENS 2N2907 technical specifications, attributes, parameters and parts with similar specifications to SIEMENS 2N2907.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    200°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Max Power Dissipation
    1.8W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Current Rating
    -600mA
  • Frequency
    200MHz
  • Base Part Number
    2N29
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    400mW
  • Power - Max
    1.8W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    200MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    20nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    40V
  • Transition Frequency
    200MHz
  • Collector Emitter Saturation Voltage
    400mV
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    75
  • Turn On Time-Max (ton)
    50ns
  • Height
    5.3mm
  • Length
    5.8mm
  • Width
    5.8mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N2907 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 600mA volts.

2N2907 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz


2N2907 Applications
There are a lot of STMicroelectronics
2N2907 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N2907 More Descriptions
Bipolar (Bjt) Single Transistor, Pnp, 40 V, 400 Mw, 600 Ma, 100 Rohs Compliant: Yes |Multicomp Pro 2N2907
Transistor, PNP, TO-18; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:200MHz; Power Dissipation Pd:400mW;
TRANSISTOR, PNP, TO-18; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 400mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-18; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 400mV; Continuous Collector Current Ic Max: 600mA; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 600mA; Current Ic hFE: 150mA; Fall Time @ Ic: 100ns; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 200MHz; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -65°C; Pin Configuration: a; Power Dissipation Ptot Max: 600mW; Voltage Vcbo: 50V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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