SIEMENS 2N2906
- Part Number:
- 2N2906
- Manufacturer:
- SIEMENS
- Ventron No:
- 5631232-2N2906
- Description:
- PNP SILICON PLANAR TRANSISTORS
- ECAD Model:
-
- Datasheet:
- 2N/FTSO/PN NPN Type (10p)
SIEMENS 2N2906 technical specifications, attributes, parameters and parts with similar specifications to SIEMENS 2N2906.
- Mounting TypeThrough Hole
- Package / CaseTO-206AA, TO-18-3 Metal Can
- Supplier Device PackageTO-18
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part Number2N2906
- Power - Max400mW
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)600mA
- RoHS StatusNon-RoHS Compliant
2N2906 Description
2N2906 transistor was designed for use in high-speed switch circuits, DC-to-VHF amplifiers, and circuits for complementary. It is silicon-based PNP epitaxial plane transistors developed to handle small signals and general-purpose switching applications.
2N2906 Features
Collector-Emitter Volt (Vceo): 40V
Collector-Base Volt (Vcbo): 60V
Collector Current (Ic): 0.6A
hfe: 40-120 @ 150mA
Power Dissipation (Ptot): 400mW
Current-Gain-Bandwidth (ftotal): 200MHz
2N2906 Applications
High–speed switching circuits
DC to VHF amplifier applications
Complementary circuitry
2N2906 transistor was designed for use in high-speed switch circuits, DC-to-VHF amplifiers, and circuits for complementary. It is silicon-based PNP epitaxial plane transistors developed to handle small signals and general-purpose switching applications.
2N2906 Features
Collector-Emitter Volt (Vceo): 40V
Collector-Base Volt (Vcbo): 60V
Collector Current (Ic): 0.6A
hfe: 40-120 @ 150mA
Power Dissipation (Ptot): 400mW
Current-Gain-Bandwidth (ftotal): 200MHz
2N2906 Applications
High–speed switching circuits
DC to VHF amplifier applications
Complementary circuitry
2N2906 More Descriptions
Small-Signal Bjt To-18 Rohs Compliant: Yes |Microchip 2N2906
Transistor BJT PNP 40V 0.6A 3-Pin TO-18
Transistor BJT PNP 40V 0.6A 3-Pin TO-18
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DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APP
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DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUN
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