SIEMENS 2N2222
- Part Number:
- 2N2222
- Manufacturer:
- SIEMENS
- Ventron No:
- 5631227-2N2222
- Description:
- NPN Silicon Planar Transistors
- ECAD Model:
-
The 2N2222 is NPN Silicon Planar Transistors , it is part of series. they are designed to work as Modules.2N2222 with pin details manufactured by SIEMENS. The 2N2222 is available in Package,it is part of the electronic component Chips.that includes Series. they are designed to operate as Modules.it is with Operating Temperature .2N2222 with original stock manufactured by SIEMENS. The 2N2222 is available in Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of 2N2222is designed to work in , it's Operating Temperature is .The 2N2222 is available in Package, is part of the Modules and belong to Discrete Semiconductor Products.2N2222 with EDA / CAD Models manufactured by SIEMENS. The 2N2222 is available in Package, is part of the Discrete Semiconductor Products.The 2N2222 is Modules with package manufactured by SIEMENS. The 2N2222 is available in Package, is part of the NPN Silicon Planar Transistors.
2N2222 More Descriptions
Bipolar (Bjt) Single Transistor, Npn, 30 V, 500 Mw, 800 Ma, 100 Rohs Compliant: Yes |Multicomp Pro 2N2222
Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, NPN
Transistor, NPN, 30V, 800MA, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:250MHz; Power
TRANSISTOR, NPN, 30V, 800MA, TO-18; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 500mW; DC Collector Current: 800mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-18; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 400mV; Continuous Collector Current Ic Max: 800mA; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 800mA; Current Ic hFE: 150mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 250MHz; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -65°C; Pin Configuration: a; Power Dissipation Ptot Max: 500mW; Voltage Vcbo: 60V
Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, NPN
Transistor, NPN, 30V, 800MA, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:250MHz; Power
TRANSISTOR, NPN, 30V, 800MA, TO-18; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 500mW; DC Collector Current: 800mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-18; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 400mV; Continuous Collector Current Ic Max: 800mA; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 800mA; Current Ic hFE: 150mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 250MHz; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -65°C; Pin Configuration: a; Power Dissipation Ptot Max: 500mW; Voltage Vcbo: 60V
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Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability
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DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUN
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HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PA
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HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PA
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