Part Number: MAP6KE51AE3 vs MAP6KE170AE3

Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product!
Part Number: MAP6KE51AE3 MAP6KE170AE3
Manufacturer: Microsemi Corporation Microsemi Corporation
Description: TVS DIODE 43.6VWM 70.1VC T18 TVS DIODE 145VWM 234VC T18
Quantity Available: Available Available
Datasheets: - -
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago) IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole Through Hole
Mounting Type Through Hole Through Hole
Package / Case T-18, Axial T-18, Axial
Number of Pins 2 2
Diode Element Material SILICON SILICON
Operating Temperature -65°C~150°C TJ -65°C~150°C TJ
Packaging Bulk Bulk
Published 1997 1997
Series Military, MIL-PRF-19500 Military, MIL-PRF-19500
JESD-609 Code e3 e3
Pbfree Code yes yes
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 2 2
ECCN Code EAR99 EAR99
Terminal Finish MATTE TIN MATTE TIN
Applications General Purpose General Purpose
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Pin Count 2 -
Number of Elements 1 1
Power Dissipation-Max 5W 5W
Element Configuration Single Single
Case Connection ISOLATED ISOLATED
Power Line Protection No No
Voltage - Breakdown (Min) 48.5V 161V
Power - Peak Pulse 600W 600W
Max Reverse Leakage Current 1μA 1μA
Clamping Voltage 70.1V 234V
Peak Pulse Current 8.6A 2.6A
Reverse Standoff Voltage 43.6V 145V
Peak Pulse Power 600W 600W
Direction Unidirectional Unidirectional
Test Current 1mA 1mA
Unidirectional Channels 1 1
RoHS Status Non-RoHS Compliant Non-RoHS Compliant
Factory Lead Time - 18 Weeks
Subcategory - Transient Suppressors
Breakdown Voltage - 170V
Submit RFQ: Submit Submit