Part Number: APTGF90SK60T1G vs APTGF150A120T3WG
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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| Part Number: | APTGF90SK60T1G | APTGF150A120T3WG |
| Manufacturer: | Microsemi Corporation | Microsemi Corporation |
| Description: | IGBT 600V 110A 416W SP1 | IGBT NPT PHASE 1200V 210A SP3 |
| Quantity Available: | Available | Available |
| Datasheets: | APTGF90SK60T1G | - |
| Mounting Type | Chassis Mount | Chassis Mount |
| Package / Case | SP1 | SP3 |
| Surface Mount | NO | - |
| Transistor Element Material | SILICON | - |
| Published | 2007 | 2009 |
| JESD-609 Code | e1 | - |
| Pbfree Code | yes | - |
| Part Status | Obsolete | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 12 | 9 |
| ECCN Code | EAR99 | EAR99 |
| Terminal Finish | TIN SILVER COPPER | - |
| Subcategory | Insulated Gate BIP Transistors | Insulated Gate BIP Transistors |
| Terminal Position | UPPER | UPPER |
| Terminal Form | THROUGH-HOLE | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | NOT SPECIFIED |
| Reach Compliance Code | compliant | - |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | NOT SPECIFIED |
| Pin Count | 12 | 25 |
| JESD-30 Code | R-XUFM-T12 | R-XUFM-X9 |
| Qualification Status | Not Qualified | Not Qualified |
| Operating Temperature (Max) | 150°C | - |
| Number of Elements | 1 | 2 |
| Configuration | Single | Half Bridge |
| Case Connection | ISOLATED | ISOLATED |
| Power - Max | 416W | - |
| Transistor Application | MOTOR CONTROL | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL |
| Input | Standard | Standard |
| Current - Collector Cutoff (Max) | 250μA | 250μA |
| Voltage - Collector Emitter Breakdown (Max) | 600V | 1200V |
| Current - Collector (Ic) (Max) | 110A | - |
| Power Dissipation-Max (Abs) | 416W | - |
| Turn On Time | 51 ns | 190 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 90A | 3.7V @ 15V, 150A |
| Turn Off Time-Nom (toff) | 210 ns | 390 ns |
| IGBT Type | NPT | NPT |
| NTC Thermistor | Yes | Yes |
| Gate-Emitter Voltage-Max | 20V | 20V |
| Input Capacitance (Cies) @ Vce | 4.3nF @ 25V | 9.3nF @ 25V |
| VCEsat-Max | 2.5 V | 3.7 V |
| RoHS Status | RoHS Compliant | RoHS Compliant |
| Mount | - | Chassis Mount, Screw |
| Number of Pins | - | 18 |
| Max Operating Temperature | - | 150°C |
| Min Operating Temperature | - | -40°C |
| Max Power Dissipation | - | 961W |
| Element Configuration | - | Dual |
| Collector Emitter Voltage (VCEO) | - | 1.2kV |
| Max Collector Current | - | 210A |
| Collector Emitter Breakdown Voltage | - | 1.2kV |
| Input Capacitance | - | 9.3nF |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
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APTGF100A1202G | Microsemi Corporation | POWER MOD IGBT NPT PHASE LEG SP2 | Compare |
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APTGF180SK60TG | Microsemi Corporation | IGBT 600V 220A 833W SP4 | Compare |
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APTGF150A60T3AG | Microsemi Corporation | MOD IGBT NPT 600V 230A SP3 | Compare |
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APTGF100DU120TG | Microsemi Corporation | IGBT MODULE NPT DUAL 1200V SP4 | Compare |
