Part Number: APTGT300DU170G vs APTGF350DU60G

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Part Number: APTGT300DU170G APTGF350DU60G
Manufacturer: Microsemi Corporation Microsemi Corporation
Description: IGBT TRENCH DUAL SOURCE 1700V SP IGBT MODULE NPT DUAL SP6
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 36 Weeks -
Mount Chassis Mount, Screw Chassis Mount, Screw
Mounting Type Chassis Mount Chassis Mount
Package / Case SP6 SP6
Number of Pins 7 7
Transistor Element Material SILICON -
Operating Temperature -40°C~150°C TJ -
Published 2011 2012
JESD-609 Code e1 e1
Pbfree Code yes yes
Part Status Active Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 7 7
ECCN Code EAR99 EAR99
Terminal Finish TIN SILVER COPPER TIN SILVER COPPER
Additional Feature AVALANCHE RATED -
Max Power Dissipation 1.66kW 1.562kW
Terminal Position UPPER UPPER
Terminal Form UNSPECIFIED UNSPECIFIED
Pin Count 7 7
Number of Elements 2 2
Configuration Dual, Common Source Dual, Common Source
Element Configuration Dual Dual
Case Connection ISOLATED ISOLATED
Power - Max 1660W 1562W
Transistor Application POWER CONTROL POWER CONTROL
Polarity/Channel Type N-CHANNEL N-CHANNEL
Input Standard Standard
Collector Emitter Voltage (VCEO) 1.7kV 600V
Max Collector Current 400A 430A
Current - Collector Cutoff (Max) 750μA 200μA
Collector Emitter Breakdown Voltage 1.7kV 600V
Voltage - Collector Emitter Breakdown (Max) 1700V -
Input Capacitance 26.5nF 17.2nF
Turn On Time 450 ns 51 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 300A 2.5V @ 15V, 360A
Turn Off Time-Nom (toff) 1100 ns 210 ns
IGBT Type Trench Field Stop NPT
NTC Thermistor No No
Input Capacitance (Cies) @ Vce 26.5nF @ 25V 17.2nF @ 25V
RoHS Status RoHS Compliant RoHS Compliant
Max Operating Temperature - 150°C
Min Operating Temperature - -40°C
Subcategory - Insulated Gate BIP Transistors
Gate-Emitter Voltage-Max - 20V
VCEsat-Max - 2.5 V
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