Part Number: APTGT300DU170G vs APTGF100A1202G

Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product!
Part Number: APTGT300DU170G APTGF100A1202G
Manufacturer: Microsemi Corporation Microsemi Corporation
Description: IGBT TRENCH DUAL SOURCE 1700V SP POWER MOD IGBT NPT PHASE LEG SP2
Quantity Available: Available Available
Datasheets: - APTGF100A1202G
Factory Lead Time 36 Weeks -
Mount Chassis Mount, Screw Chassis Mount, Screw
Mounting Type Chassis Mount Chassis Mount
Package / Case SP6 SP2
Number of Pins 7 18
Transistor Element Material SILICON -
Operating Temperature -40°C~150°C TJ -
Published 2011 2012
JESD-609 Code e1 -
Pbfree Code yes -
Part Status Active Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 7 -
ECCN Code EAR99 EAR99
Terminal Finish TIN SILVER COPPER -
Additional Feature AVALANCHE RATED -
Max Power Dissipation 1.66kW 568W
Terminal Position UPPER -
Terminal Form UNSPECIFIED -
Pin Count 7 -
Number of Elements 2 1
Configuration Dual, Common Source Half Bridge
Element Configuration Dual Dual
Case Connection ISOLATED -
Power - Max 1660W -
Transistor Application POWER CONTROL -
Polarity/Channel Type N-CHANNEL -
Input Standard Standard
Collector Emitter Voltage (VCEO) 1.7kV 1.2kV
Max Collector Current 400A 135A
Current - Collector Cutoff (Max) 750μA 250μA
Collector Emitter Breakdown Voltage 1.7kV 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1700V 1200V
Input Capacitance 26.5nF 6.5nF
Turn On Time 450 ns -
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 300A 3.7V @ 15V, 100A
Turn Off Time-Nom (toff) 1100 ns -
IGBT Type Trench Field Stop NPT
NTC Thermistor No No
Input Capacitance (Cies) @ Vce 26.5nF @ 25V 6.5nF @ 25V
RoHS Status RoHS Compliant RoHS Compliant
Max Operating Temperature - 150°C
Min Operating Temperature - -40°C
Subcategory - Insulated Gate BIP Transistors
Gate-Emitter Voltage-Max - 20V
VCEsat-Max - 3.7 V
Submit RFQ: Submit Submit