Part Number: APTGT300DU170G vs APTGF100A1202G
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Part Number: | APTGT300DU170G | APTGF100A1202G |
Manufacturer: | Microsemi Corporation | Microsemi Corporation |
Description: | IGBT TRENCH DUAL SOURCE 1700V SP | POWER MOD IGBT NPT PHASE LEG SP2 |
Quantity Available: | Available | Available |
Datasheets: | - | APTGF100A1202G |
Factory Lead Time | 36 Weeks | - |
Mount | Chassis Mount, Screw | Chassis Mount, Screw |
Mounting Type | Chassis Mount | Chassis Mount |
Package / Case | SP6 | SP2 |
Number of Pins | 7 | 18 |
Transistor Element Material | SILICON | - |
Operating Temperature | -40°C~150°C TJ | - |
Published | 2011 | 2012 |
JESD-609 Code | e1 | - |
Pbfree Code | yes | - |
Part Status | Active | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
Number of Terminations | 7 | - |
ECCN Code | EAR99 | EAR99 |
Terminal Finish | TIN SILVER COPPER | - |
Additional Feature | AVALANCHE RATED | - |
Max Power Dissipation | 1.66kW | 568W |
Terminal Position | UPPER | - |
Terminal Form | UNSPECIFIED | - |
Pin Count | 7 | - |
Number of Elements | 2 | 1 |
Configuration | Dual, Common Source | Half Bridge |
Element Configuration | Dual | Dual |
Case Connection | ISOLATED | - |
Power - Max | 1660W | - |
Transistor Application | POWER CONTROL | - |
Polarity/Channel Type | N-CHANNEL | - |
Input | Standard | Standard |
Collector Emitter Voltage (VCEO) | 1.7kV | 1.2kV |
Max Collector Current | 400A | 135A |
Current - Collector Cutoff (Max) | 750μA | 250μA |
Collector Emitter Breakdown Voltage | 1.7kV | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1700V | 1200V |
Input Capacitance | 26.5nF | 6.5nF |
Turn On Time | 450 ns | - |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 300A | 3.7V @ 15V, 100A |
Turn Off Time-Nom (toff) | 1100 ns | - |
IGBT Type | Trench Field Stop | NPT |
NTC Thermistor | No | No |
Input Capacitance (Cies) @ Vce | 26.5nF @ 25V | 6.5nF @ 25V |
RoHS Status | RoHS Compliant | RoHS Compliant |
Max Operating Temperature | - | 150°C |
Min Operating Temperature | - | -40°C |
Subcategory | - | Insulated Gate BIP Transistors |
Gate-Emitter Voltage-Max | - | 20V |
VCEsat-Max | - | 3.7 V |
Submit RFQ: | Submit | Submit |