Part Number: VRF154FL vs VRF141G

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Part Number: VRF154FL VRF141G
Manufacturer: Microsemi Corporation Microsemi Corporation
Description: MOSFET RF PWR N-CH 50V 600W T2 RF PWR MOSFET 80V 40A DIE
Quantity Available: Available Available
Datasheets: - -
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago) IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 32 Weeks 25 Weeks
Package / Case T2 SOT-540A
Surface Mount YES -
Transistor Element Material SILICON -
Packaging Tube Bulk
Published 1998 1998
JESD-609 Code e1 -
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 2 4
ECCN Code EAR99 EAR99
Terminal Finish TIN SILVER COPPER -
Current Rating (Amps) 4mA -
Terminal Position DUAL DUAL
Terminal Form FLAT FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED -
Current Rating 60A 40A
Frequency 80MHz 175MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED -
Pin Count 2 4
JESD-30 Code R-CDFM-F2 R-CDFM-F4
Qualification Status Not Qualified Not Qualified
Operating Temperature (Max) 200°C -
Number of Elements 1 1
Configuration SINGLE SINGLE
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Case Connection SOURCE SOURCE
Current - Test 800mA 500mA
Transistor Application AMPLIFIER AMPLIFIER
Drain to Source Voltage (Vdss) 170V 80V
Transistor Type N-Channel N-Channel
Gain 17dB 14dB
Power - Output 600W 300W
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V 28V
RoHS Status RoHS Compliant RoHS Compliant
Lead Free Lead Free Lead Free
Mount - Screw
Number of Pins - 5
Max Operating Temperature - 150°C
Min Operating Temperature - -65°C
Max Power Dissipation - 500W
Continuous Drain Current (ID) - 40A
Gate to Source Voltage (Vgs) - 40V
Min Breakdown Voltage - 80V
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