Part Number: RN1104T5LFT vs RN1109,LF(CT
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number: | RN1104T5LFT | RN1109,LF(CT |
| Manufacturer: | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage |
| Description: | TRANS PREBIAS NPN 0.1W SSM | TRANS PREBIAS NPN 100MW SSM |
| Quantity Available: | Available | Available |
| Datasheets: | RN110x | - |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | SC-75, SOT-416 | SC-75, SOT-416 |
| Number of Pins | 3 | - |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Published | 2009 | 2014 |
| Part Status | Active | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Max Operating Temperature | 150°C | - |
| Min Operating Temperature | -55°C | - |
| Max Power Dissipation | 100mW | 100mW |
| Base Part Number | RN110* | - |
| Polarity | NPN | - |
| Element Configuration | Single | - |
| Transistor Type | NPN - Pre-Biased | NPN - Pre-Biased |
| Collector Emitter Voltage (VCEO) | 50V | 300mV |
| Max Collector Current | 100mA | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA 5V | 70 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 500nA | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA | 300mV @ 250μA, 5mA |
| Collector Emitter Breakdown Voltage | 50V | 50V |
| Max Breakdown Voltage | 50V | - |
| Frequency - Transition | 250MHz | 250MHz |
| Resistor - Base (R1) | 47 k Ω | 47 k Ω |
| Resistor - Emitter Base (R2) | 47 k Ω | 22 k Ω |
| Radiation Hardening | No | - |
| RoHS Status | RoHS Compliant | RoHS Compliant |
| Factory Lead Time | - | 12 Weeks |
| Power - Max | - | 100mW |
| Submit RFQ: | Submit | Submit |
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RN1109(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W SSM | Compare |
