| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
RN1104T5LFT |
RN1110CT(TPL3) |
| Manufacturer: |
Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage |
| Description: |
TRANS PREBIAS NPN 0.1W SSM |
TRANS PREBIAS NPN 0.05W CST3 |
| Quantity Available: |
Available |
Available |
| Datasheets: |
RN110x
|
RN1110-11
|
| Mount |
Surface Mount |
- |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
SC-75, SOT-416 |
SC-101, SOT-883 |
| Number of Pins |
3 |
- |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Published |
2009 |
2011 |
| Part Status |
Active |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
- |
| Min Operating Temperature |
-55°C |
- |
| Max Power Dissipation |
100mW |
- |
| Base Part Number |
RN110* |
- |
| Polarity |
NPN |
- |
| Element Configuration |
Single |
- |
| Transistor Type |
NPN - Pre-Biased |
NPN - Pre-Biased |
| Collector Emitter Voltage (VCEO) |
50V |
- |
| Max Collector Current |
100mA |
- |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 10mA 5V |
300 @ 1mA 5V |
| Current - Collector Cutoff (Max) |
500nA |
100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 250μA, 5mA |
150mV @ 250μA, 5mA |
| Collector Emitter Breakdown Voltage |
50V |
- |
| Max Breakdown Voltage |
50V |
- |
| Frequency - Transition |
250MHz |
- |
| Resistor - Base (R1) |
47 k Ω |
4.7 k Ω |
| Resistor - Emitter Base (R2) |
47 k Ω |
- |
| Radiation Hardening |
No |
- |
| RoHS Status |
RoHS Compliant |
- |
| Surface Mount |
- |
YES |
| Transistor Element Material |
- |
SILICON |
| Subcategory |
- |
BIP General Purpose Small Signal |
| Number of Elements |
- |
1 |
| Power - Max |
- |
50mW |
| Polarity/Channel Type |
- |
NPN |
| Voltage - Collector Emitter Breakdown (Max) |
- |
20V |
| Current - Collector (Ic) (Max) |
- |
50mA |
| Power Dissipation-Max (Abs) |
- |
0.05W |
| Submit RFQ: |
Submit |
Submit |
