Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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Part Number: |
RN1104T5LFT |
RN1103ACT(TPL3) |
Manufacturer: |
Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage |
Description: |
TRANS PREBIAS NPN 0.1W SSM |
TRANS PREBIAS NPN 0.1W CST3 |
Quantity Available: |
Available |
Available |
Datasheets: |
RN110x
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-
|
Mount |
Surface Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Surface Mount |
Package / Case |
SC-75, SOT-416 |
SC-101, SOT-883 |
Number of Pins |
3 |
- |
Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
Published |
2009 |
2014 |
Part Status |
Active |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
- |
Min Operating Temperature |
-55°C |
- |
Max Power Dissipation |
100mW |
100mW |
Base Part Number |
RN110* |
- |
Polarity |
NPN |
- |
Element Configuration |
Single |
- |
Transistor Type |
NPN - Pre-Biased |
NPN - Pre-Biased |
Collector Emitter Voltage (VCEO) |
50V |
150mV |
Max Collector Current |
100mA |
80mA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 10mA 5V |
70 @ 10mA 5V |
Current - Collector Cutoff (Max) |
500nA |
500nA |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 250μA, 5mA |
150mV @ 250μA, 5mA |
Collector Emitter Breakdown Voltage |
50V |
50V |
Max Breakdown Voltage |
50V |
50V |
Frequency - Transition |
250MHz |
- |
Resistor - Base (R1) |
47 k Ω |
22 k Ω |
Resistor - Emitter Base (R2) |
47 k Ω |
22 k Ω |
Radiation Hardening |
No |
- |
RoHS Status |
RoHS Compliant |
RoHS Compliant |
Transistor Element Material |
- |
SILICON |
Subcategory |
- |
BIP General Purpose Small Signal |
Reach Compliance Code |
- |
unknown |
Number of Elements |
- |
1 |
Power - Max |
- |
100mW |
Polarity/Channel Type |
- |
NPN |
Submit RFQ: |
Submit |
Submit |