Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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Part Number: |
DTA123JKAT146 |
DTA143ZCA-TP |
Manufacturer: |
Rohm Semiconductor |
Micro Commercial Co |
Description: |
TRANS PREBIAS PNP 200MW SMT3 |
TRANS PREBIAS PNP 200MW SOT23 |
Quantity Available: |
Available |
Available |
Datasheets: |
-
|
-
|
Factory Lead Time |
13 Weeks |
12 Weeks |
Mount |
Surface Mount |
- |
Mounting Type |
Surface Mount |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
- |
Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
Published |
2009 |
2004 |
JESD-609 Code |
e1 |
e3 |
Pbfree Code |
yes |
yes |
Part Status |
Active |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
Number of Terminations |
3 |
3 |
Termination |
SMD/SMT |
- |
ECCN Code |
EAR99 |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Matte Tin (Sn) |
Max Operating Temperature |
150°C |
- |
Min Operating Temperature |
-55°C |
- |
Subcategory |
BIP General Purpose Small Signal |
BIP General Purpose Small Signal |
Voltage - Rated DC |
-50V |
- |
Max Power Dissipation |
200mW |
- |
Terminal Position |
DUAL |
DUAL |
Terminal Form |
GULL WING |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
260 |
Current Rating |
-100mA |
- |
Time@Peak Reflow Temperature-Max (s) |
10 |
10 |
Base Part Number |
DTA123 |
DTA143Z |
Pin Count |
3 |
3 |
Max Output Current |
100mA |
- |
Operating Supply Voltage |
50V |
- |
Number of Elements |
1 |
1 |
Polarity |
PNP |
- |
Number of Channels |
1 |
- |
Element Configuration |
Single |
- |
Power Dissipation |
200mW |
- |
Transistor Application |
SWITCHING |
SWITCHING |
Transistor Type |
PNP - Pre-Biased |
PNP - Pre-Biased |
Collector Emitter Voltage (VCEO) |
300mV |
- |
Max Collector Current |
100mA |
- |
DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 10mA 5V |
80 @ 10mA 5V |
Current - Collector Cutoff (Max) |
500nA |
500nA |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 250μA, 5mA |
300mV @ 250μA, 5mA |
Collector Emitter Breakdown Voltage |
50V |
- |
Transition Frequency |
250MHz |
250MHz |
Collector Emitter Saturation Voltage |
-300mV |
- |
Max Breakdown Voltage |
50V |
- |
Frequency - Transition |
250MHz |
250MHz |
hFE Min |
80 |
- |
Resistor - Base (R1) |
2.2 k Ω |
4.7 k Ω |
Continuous Collector Current |
-100mA |
- |
Resistor - Emitter Base (R2) |
47 k Ω |
47 k Ω |
Height |
1.1mm |
- |
Length |
2.9mm |
- |
Width |
1.6mm |
- |
REACH SVHC |
No SVHC |
- |
Radiation Hardening |
No |
- |
RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
Lead Free |
Lead Free |
- |
Surface Mount |
- |
YES |
Transistor Element Material |
- |
SILICON |
Additional Feature |
- |
BUILT IN BAIS RESISTOR RATIO IS 10 |
JESD-30 Code |
- |
R-PDSO-G3 |
Qualification Status |
- |
Not Qualified |
Configuration |
- |
SINGLE WITH BUILT-IN RESISTOR |
Power - Max |
- |
200mW |
Polarity/Channel Type |
- |
PNP |
Voltage - Collector Emitter Breakdown (Max) |
- |
50V |
Current - Collector (Ic) (Max) |
- |
100mA |
Power Dissipation-Max (Abs) |
- |
0.2W |
Submit RFQ: |
Submit |
Submit |