Part Number: DTA123JKAT146 vs DTA143ZCA-TP

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Part Number: DTA123JKAT146 DTA143ZCA-TP
Manufacturer: Rohm Semiconductor Micro Commercial Co
Description: TRANS PREBIAS PNP 200MW SMT3 TRANS PREBIAS PNP 200MW SOT23
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 13 Weeks 12 Weeks
Mount Surface Mount -
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Number of Pins 3 -
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 2009 2004
JESD-609 Code e1 e3
Pbfree Code yes yes
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 3 3
Termination SMD/SMT -
ECCN Code EAR99 EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) Matte Tin (Sn)
Max Operating Temperature 150°C -
Min Operating Temperature -55°C -
Subcategory BIP General Purpose Small Signal BIP General Purpose Small Signal
Voltage - Rated DC -50V -
Max Power Dissipation 200mW -
Terminal Position DUAL DUAL
Terminal Form GULL WING GULL WING
Peak Reflow Temperature (Cel) 260 260
Current Rating -100mA -
Time@Peak Reflow Temperature-Max (s) 10 10
Base Part Number DTA123 DTA143Z
Pin Count 3 3
Max Output Current 100mA -
Operating Supply Voltage 50V -
Number of Elements 1 1
Polarity PNP -
Number of Channels 1 -
Element Configuration Single -
Power Dissipation 200mW -
Transistor Application SWITCHING SWITCHING
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV -
Max Collector Current 100mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V -
Transition Frequency 250MHz 250MHz
Collector Emitter Saturation Voltage -300mV -
Max Breakdown Voltage 50V -
Frequency - Transition 250MHz 250MHz
hFE Min 80 -
Resistor - Base (R1) 2.2 k Ω 4.7 k Ω
Continuous Collector Current -100mA -
Resistor - Emitter Base (R2) 47 k Ω 47 k Ω
Height 1.1mm -
Length 2.9mm -
Width 1.6mm -
REACH SVHC No SVHC -
Radiation Hardening No -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lead Free Lead Free -
Surface Mount - YES
Transistor Element Material - SILICON
Additional Feature - BUILT IN BAIS RESISTOR RATIO IS 10
JESD-30 Code - R-PDSO-G3
Qualification Status - Not Qualified
Configuration - SINGLE WITH BUILT-IN RESISTOR
Power - Max - 200mW
Polarity/Channel Type - PNP
Voltage - Collector Emitter Breakdown (Max) - 50V
Current - Collector (Ic) (Max) - 100mA
Power Dissipation-Max (Abs) - 0.2W
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