Microsemi Corporation 1N6663US

Name: 1N6663US
Brand: Microsemi Corporation
SKU: 2825169-1N6663US
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N6663US

Manufacturer:: Microsemi Corporation

Ventron No:: 2825169-1N6663US

Description:: DIODE GEN PURP 600V 500MA D5A

ECAD Model:

Datasheet:: 1N6663US

Specifications

Microsemi Corporation 1N6663US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N6663US.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
7 Weeks
Contact Plating
Lead, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SQ-MELF, A
Number of Pins
2
Diode Element Material
SILICON
Packaging
Bulk
Published
1999
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
HTS Code
8541.10.00.70
Terminal Position
AXIAL
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
50nA @ 600V
Voltage - Forward (Vf) (Max) @ If
1V @ 400mA
Case Connection
ISOLATED
Forward Current
500mA
Operating Temperature - Junction
-65°C~175°C
Current - Average Rectified (Io)
500mA DC
Forward Voltage
1V
Max Reverse Voltage (DC)
600V
Average Rectified Current
500mA
Max Repetitive Reverse Voltage (Vrrm)
600V
JEDEC-95 Code
DO-35
Peak Non-Repetitive Surge Current
5A
RoHS Status
Non-RoHS Compliant

Description

1N6663US Overview
Devices with this rating have an average rectified current of 500mA volts.500mA is the maximum value of forward current.

1N6663US Features
an average rectified current of 500mA volts

1N6663US Applications
There are a lot of Microsemi Corporation
1N6663US applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N6663US More Descriptions

Rectifier Diode, 1 Phase, 1 Element, 0.5A, Silicon, DO-35
Rectifier Diode Switching 600V 0.5A 2-Pin A-MELF Bag
Std Rectifier _ A-Body Sq. Melf
SIGNAL OR COMPUTER DIODE A_SQ._MELF SD
DIODE GEN PURP 600V 500MA D-5A
1N6663US -- Local Stock w/CERTS

Product Comparison

The three parts on the right have similar specifications to 1N6663US.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Current - Average Rectified (Io)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Max Repetitive Reverse Voltage (Vrrm)

JEDEC-95 Code

Peak Non-Repetitive Surge Current

RoHS Status

Additional Feature

Capacitance

Voltage - Rated DC

Technology

Reach Compliance Code

Current Rating

Base Part Number

Pin Count

Output Current

Application

Number of Phases

Reverse Recovery Time

Peak Reverse Current

Radiation Hardening

Lead Free

Subcategory

Output Current-Max

Capacitance @ Vr, F

Voltage - DC Reverse (Vr) (Max)

View Compare
1N6663US

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

7 Weeks

Lead, Tin

Surface Mount

Surface Mount

SQ-MELF, A

2

SILICON

Bulk

1999

e0

no

Active

1 (Unlimited)

2

EAR99

TIN LEAD

175°C

-65°C

8541.10.00.70

AXIAL

WIRE

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

50nA @ 600V

1V @ 400mA

ISOLATED

500mA

-65°C~175°C

500mA DC

1V

600V

500mA

600V

DO-35

5A

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N6622

Microsemi Corporation

-

17 Weeks

Lead, Tin

Through Hole

Through Hole

A, Axial

2

SILICON

Bulk

1997

e0

-

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

150°C

-65°C

8541.10.00.80

-

WIRE

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

500nA @ 600V

1.4V @ 1.2A

ISOLATED

1.2A

-65°C~150°C

-

1.6V

600V

1.2A

660V

-

20A

RoHS Compliant

HIGH RELIABILITY

10pF

600V

AVALANCHE

not_compliant

2A

1N6622

2

2A

ULTRA FAST RECOVERY

1

45 ns

500nA

Yes

Contains Lead

-

-

-

-

1N6663US vs 1N6622
1N6628US

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

17 Weeks

-

Surface Mount, Through Hole

Surface Mount

SQ-MELF, A

2

SILICON

Bulk

1997

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

150°C

-65°C

8541.10.00.80

END

WRAP AROUND

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

2μA @ 660V

1.35V @ 2A

ISOLATED

1.75A

-65°C~150°C

-

1.5V

660V

1.75A

660V

-

75A

Non-RoHS Compliant

METALLURGICALLY BONDED

-

-

AVALANCHE

-

-

-

2

-

HIGH VOLTAGE ULTRA FAST RECOVERY

1

30 ns

2μA

Yes

-

Rectifier Diodes

4A

40pF @ 10V 1MHz

-

1N6663US vs 1N6628US
1N6631

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

17 Weeks

Lead, Tin

Through Hole

Through Hole

A, Axial

2

SILICON

Bulk

1997

e0

-

Discontinued

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

150°C

-65°C

8541.10.00.80

-

WIRE

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

4μA @ 1100V

1.4V @ 1.4A

ISOLATED

1.4A

-65°C~150°C

-

1.95V

1.1kV

1.4A

1.1kV

-

60A

Non-RoHS Compliant

METALLURGICALLY BONDED, HIGH RELIABILITY

-

-

-

-

-

-

2

-

ULTRA FAST RECOVERY

1

60 ns

-

-

-

-

-

40pF @ 10V 1MHz

1100V

1N6663US vs 1N6631