Microsemi Corporation 1N6642US

Name: 1N6642US
Brand: Microsemi Corporation
SKU: 2824322-1N6642US
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N6642US

Manufacturer:: Microsemi Corporation

Ventron No:: 2824322-1N6642US

Description:: DIODE GEN PURP 75V 300MA D5D

ECAD Model:

Datasheet:: 1N6642US

Specifications

Microsemi Corporation 1N6642US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N6642US.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
6 Weeks
Contact Plating
Lead, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SQ-MELF, D
Number of Pins
2
Diode Element Material
SILICON
Packaging
Bulk
Published
1997
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Additional Feature
METALLURGICALLY BONDED
HTS Code
8541.10.00.70
Terminal Position
END
Terminal Form
WRAP AROUND
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
500nA @ 75V
Voltage - Forward (Vf) (Max) @ If
1.2V @ 100mA
Case Connection
ISOLATED
Forward Current
300mA
Operating Temperature - Junction
-65°C~175°C
Output Current-Max
0.3A
Forward Voltage
1.2V
Max Reverse Voltage (DC)
75V
Average Rectified Current
300mA
Reverse Recovery Time
5 ns
Peak Reverse Current
500nA
Max Repetitive Reverse Voltage (Vrrm)
75V
Capacitance @ Vr, F
5pF @ 0V 1MHz
Peak Non-Repetitive Surge Current
2.5A
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

1N6642US Overview
In this device, there is an average rectified current of 300mA volts.Forward current may not exceed 300mA.Output current is maximal at 0.3A.As the data chart indicates, the peak reverse is 500nA.

1N6642US Features
an average rectified current of 300mA volts
0.3A is the maximum value
the peak reverse is 500nA

1N6642US Applications
There are a lot of Microsemi Corporation
1N6642US applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N6642US More Descriptions

Rectifier Diode, 1 Phase, 1 Element, 0.3A, 75V V(RRM), Silicon
Rectifier Diode Switching 75V 0.3A 5ns 2-Pin B-MELF Bag
Signal or Computer Diode _ D-5D
1N6642US Series 75 V 300 mA Hermetically Sealed Switching Diode - D-5D
DIODE GEN PURP 1.8KV 60A TO247AD
1N6642US -- Local Stock w/CERTS

Product Comparison

The three parts on the right have similar specifications to 1N6642US.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Terminal Position

Terminal Form

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Output Current-Max

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

Radiation Hardening

RoHS Status

Lead Free

Capacitance

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Output Current

Application

Number of Phases

Subcategory

Reverse Current-Max

View Compare
1N6642US

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

6 Weeks

Lead, Tin

Surface Mount

Surface Mount

SQ-MELF, D

2

SILICON

Bulk

1997

e0

no

Active

1 (Unlimited)

2

EAR99

TIN LEAD

175°C

-65°C

METALLURGICALLY BONDED

8541.10.00.70

END

WRAP AROUND

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

500nA @ 75V

1.2V @ 100mA

ISOLATED

300mA

-65°C~175°C

0.3A

1.2V

75V

300mA

5 ns

500nA

75V

5pF @ 0V 1MHz

2.5A

No

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N6622

Microsemi Corporation

-

17 Weeks

Lead, Tin

Through Hole

Through Hole

A, Axial

2

SILICON

Bulk

1997

e0

-

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

150°C

-65°C

HIGH RELIABILITY

8541.10.00.80

-

WIRE

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

500nA @ 600V

1.4V @ 1.2A

ISOLATED

1.2A

-65°C~150°C

-

1.6V

600V

1.2A

45 ns

500nA

660V

-

20A

Yes

RoHS Compliant

Contains Lead

10pF

600V

AVALANCHE

NOT SPECIFIED

not_compliant

2A

NOT SPECIFIED

1N6622

2

Not Qualified

2A

ULTRA FAST RECOVERY

1

-

-

1N6642US vs 1N6622
1N6628US

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

17 Weeks

-

Surface Mount, Through Hole

Surface Mount

SQ-MELF, A

2

SILICON

Bulk

1997

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

150°C

-65°C

METALLURGICALLY BONDED

8541.10.00.80

END

WRAP AROUND

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

2μA @ 660V

1.35V @ 2A

ISOLATED

1.75A

-65°C~150°C

4A

1.5V

660V

1.75A

30 ns

2μA

660V

40pF @ 10V 1MHz

75A

Yes

Non-RoHS Compliant

-

-

-

AVALANCHE

NOT SPECIFIED

-

-

NOT SPECIFIED

-

2

Not Qualified

-

HIGH VOLTAGE ULTRA FAST RECOVERY

1

Rectifier Diodes

-

1N6642US vs 1N6628US
1N6621

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

17 Weeks

Lead, Tin

Through Hole

Through Hole

A, Axial

2

SILICON

Bulk

1997

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

150°C

-65°C

HIGH RELIABILITY

8541.10.00.80

-

WIRE

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

500nA @ 440V

1.4V @ 1.2A

ISOLATED

1.2A

-65°C~150°C

-

1.6V

440V

1.2A

30 ns

-

440V

10pF @ 10V 1MHz

20A

-

Non-RoHS Compliant

-

-

-

AVALANCHE

NOT SPECIFIED

not_compliant

-

NOT SPECIFIED

-

2

Not Qualified

-

ULTRA FAST RECOVERY

1

-

0.5μA

1N6642US vs 1N6621