Microsemi Corporation 1N6627

Name: 1N6627
Brand: Microsemi Corporation
SKU: 2430685-1N6627
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N6627

Manufacturer:: Microsemi Corporation

Ventron No:: 2430685-1N6627

Description:: DIODE GEN PURP 440V 1.75A AXIAL

ECAD Model:

Datasheet:: 1N6627

Specifications

Microsemi Corporation 1N6627 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N6627.

Lifecycle Status
IN PRODUCTION (Last Updated: 2 weeks ago)
Factory Lead Time
17 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
A, Axial
Number of Pins
2
Diode Element Material
SILICON
Packaging
Bulk
Published
1997
JESD-609 Code
e0
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Additional Feature
METALLURGICALLY BONDED, HIGH RELIABILITY
HTS Code
8541.10.00.80
Technology
AVALANCHE
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
2μA @ 440V
Voltage - Forward (Vf) (Max) @ If
1.35V @ 2A
Case Connection
ISOLATED
Forward Current
1.75A
Operating Temperature - Junction
-65°C~150°C
Application
ULTRA FAST RECOVERY
Forward Voltage
1.5V
Max Reverse Voltage (DC)
440V
Average Rectified Current
1.75A
Number of Phases
1
Reverse Recovery Time
30 ns
Peak Reverse Current
2μA
Max Repetitive Reverse Voltage (Vrrm)
440V
Capacitance @ Vr, F
40pF @ 10V 1MHz
Peak Non-Repetitive Surge Current
75A
Radiation Hardening
Yes
RoHS Status
Non-RoHS Compliant

Description

1N6627 Overview
In this device, there is an average rectified current of 1.75A volts.Forward current may not exceed 1.75A.As the data chart indicates, the peak reverse is 2μA.

1N6627 Features
an average rectified current of 1.75A volts
the peak reverse is 2μA

1N6627 Applications
There are a lot of Microsemi Corporation
1N6627 applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

Product Comparison

The three parts on the right have similar specifications to 1N6627.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Application

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

Radiation Hardening

RoHS Status

Contact Plating

ECCN Code

Capacitance

Voltage - Rated DC

Reach Compliance Code

Current Rating

Base Part Number

Output Current

Lead Free

Pbfree Code

Output Current-Max

Voltage - DC Reverse (Vr) (Max)

Reverse Current-Max

View Compare
1N6627

Microsemi Corporation

IN PRODUCTION (Last Updated: 2 weeks ago)

17 Weeks

Through Hole

Through Hole

A, Axial

2

SILICON

Bulk

1997

e0

Active

1 (Unlimited)

2

Tin/Lead (Sn/Pb)

150°C

-65°C

METALLURGICALLY BONDED, HIGH RELIABILITY

8541.10.00.80

AVALANCHE

WIRE

NOT SPECIFIED

NOT SPECIFIED

2

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

2μA @ 440V

1.35V @ 2A

ISOLATED

1.75A

-65°C~150°C

ULTRA FAST RECOVERY

1.5V

440V

1.75A

1

30 ns

2μA

440V

40pF @ 10V 1MHz

75A

Yes

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N6622

Microsemi Corporation

-

17 Weeks

Through Hole

Through Hole

A, Axial

2

SILICON

Bulk

1997

e0

Active

1 (Unlimited)

2

Tin/Lead (Sn/Pb)

150°C

-65°C

HIGH RELIABILITY

8541.10.00.80

AVALANCHE

WIRE

NOT SPECIFIED

NOT SPECIFIED

2

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

500nA @ 600V

1.4V @ 1.2A

ISOLATED

1.2A

-65°C~150°C

ULTRA FAST RECOVERY

1.6V

600V

1.2A

1

45 ns

500nA

660V

-

20A

Yes

RoHS Compliant

Lead, Tin

EAR99

10pF

600V

not_compliant

2A

1N6622

2A

Contains Lead

-

-

-

-

1N6627 vs 1N6622
1N6625

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

17 Weeks

Through Hole

Through Hole

A, Axial

2

SILICON

Bulk

1997

e0

Active

1 (Unlimited)

2

TIN LEAD

150°C

-65°C

HIGH RELIABILITY

8541.10.00.80

AVALANCHE

WIRE

NOT SPECIFIED

NOT SPECIFIED

2

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

1μA @ 1100V

1.75V @ 1A

ISOLATED

1A

-65°C~150°C

-

1.95V

1.1kV

1A

-

60 ns

-

1.1kV

10pF @ 10V 1MHz

15A

-

Non-RoHS Compliant

Lead, Tin

EAR99

-

-

-

-

-

-

-

no

1A

1100V

-

1N6627 vs 1N6625
1N6621

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

17 Weeks

Through Hole

Through Hole

A, Axial

2

SILICON

Bulk

1997

e0

Active

1 (Unlimited)

2

Tin/Lead (Sn/Pb)

150°C

-65°C

HIGH RELIABILITY

8541.10.00.80

AVALANCHE

WIRE

NOT SPECIFIED

NOT SPECIFIED

2

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

500nA @ 440V

1.4V @ 1.2A

ISOLATED

1.2A

-65°C~150°C

ULTRA FAST RECOVERY

1.6V

440V

1.2A

1

30 ns

-

440V

10pF @ 10V 1MHz

20A

-

Non-RoHS Compliant

Lead, Tin

EAR99

-

-

not_compliant

-

-

-

-

no

-

-

0.5μA

1N6627 vs 1N6621