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1N6484-E3/97

Vishay Semiconductor Diodes Division 1N6484-E3/97

Part Number:
1N6484-E3/97
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
2825655-1N6484-E3/97
Description:
DIODE GEN PURP 1KV 1A DO213AB
ECAD Model:
Datasheet:
1N6484-E3/97

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Specifications
Vishay Semiconductor Diodes Division 1N6484-E3/97 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division 1N6484-E3/97.
  • Factory Lead Time
    19 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    DO-213AB, MELF (Glass)
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Series
    SUPERECTIFIER®
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    FREE WHEELING DIODE, HIGH RELIABILITY
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Peak Reflow Temperature (Cel)
    250
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    1N6484
  • Pin Count
    2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    10μA @ 1000V
  • Voltage - Forward (Vf) (Max) @ If
    1.1V @ 1A
  • Case Connection
    ISOLATED
  • Forward Current
    1A
  • Operating Temperature - Junction
    -65°C~175°C
  • Max Surge Current
    30A
  • Output Current-Max
    1A
  • Voltage - DC Reverse (Vr) (Max)
    1000V
  • Forward Voltage
    1.1V
  • Max Reverse Voltage (DC)
    1kV
  • Average Rectified Current
    1A
  • Peak Reverse Current
    10μA
  • Max Repetitive Reverse Voltage (Vrrm)
    1kV
  • Capacitance @ Vr, F
    8pF @ 4V 1MHz
  • Peak Non-Repetitive Surge Current
    30A
  • Reverse Voltage
    1kV
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
1N6484-E3/97 Overview
The reverse voltage should be 1kV.In this device, there is an average rectified current of 1A volts.Forward current may not exceed 1A.This is the maximum amount of 30A surge current that can be used.Output current is maximal at 1A.As the data chart indicates, the peak reverse is 10μA.

1N6484-E3/97 Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 10μA


1N6484-E3/97 Applications
There are a lot of Vishay Semiconductor Diodes Division
1N6484-E3/97 applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N6484-E3/97 More Descriptions
Diode Switching 1KV 1A 2-Pin DO-213AB T/R
Diode Standard 1000V 1A Surface Mount DO-213AB
1A,1000V,std,superect.melf |Vishay 1N6484-E3/97
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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