1N5619US

Microsemi Corporation 1N5619US

Part Number:
1N5619US
Manufacturer:
Microsemi Corporation
Ventron No:
2422512-1N5619US
Description:
DIODE GEN PURP 600V 1A D5A
ECAD Model:
Datasheet:
1N5619US

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Specifications
Microsemi Corporation 1N5619US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N5619US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 2 weeks ago)
  • Factory Lead Time
    7 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, A
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY
  • HTS Code
    8541.10.00.80
  • Technology
    AVALANCHE
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    500nA @ 600V
  • Voltage - Forward (Vf) (Max) @ If
    1.6V @ 3A
  • Case Connection
    ISOLATED
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    1A
  • Forward Voltage
    1.6V
  • Max Reverse Voltage (DC)
    600V
  • Average Rectified Current
    1A
  • Reverse Recovery Time
    250 ns
  • Peak Reverse Current
    500nA
  • Max Repetitive Reverse Voltage (Vrrm)
    600V
  • Capacitance @ Vr, F
    25pF @ 12V 1MHz
  • Peak Non-Repetitive Surge Current
    30A
  • Natural Thermal Resistance
    13 °C/W
  • Radiation Hardening
    Yes
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
1N5619US Overview
There is an average rectified current of 1A volts for this device.Thermal resistance is a heat property and a measurement of a temperature difference by which an object or material resists a heat flow, and its natural thermal resistance is 13 °C/W.In terms of output current, 1A is the maximum value.In the datasheets, the peak reverse is 500nA, as indicated by the data chart.

1N5619US Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 500nA


1N5619US Applications
There are a lot of Microsemi Corporation
1N5619US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N5619US More Descriptions
Rectifier Diode Switching 600V 1A 250ns 2-Pin A-MELF Bag
Non-Compliant Surface Mount Contains Lead MELF 2 1.6 V Production (Last Updated: 2 months ago)
1N5619US Series 600 V 1 A Fast Recovery Surface Mount Rectifier Diode - D-5A
Diode Fast Recovery 600V 1A 2-Pin Case A Bag
1N5619US -- Local Stock w/CERTS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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