1N5614US

Microsemi Corporation 1N5614US

Part Number:
1N5614US
Manufacturer:
Microsemi Corporation
Ventron No:
2425112-1N5614US
Description:
DIODE GEN PURP 200V 1A D5A
ECAD Model:
Datasheet:
1N5614US

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Specifications
Microsemi Corporation 1N5614US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N5614US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    7 Weeks
  • Contact Plating
    Lead, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, A
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    200°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY
  • HTS Code
    8541.10.00.80
  • Technology
    AVALANCHE
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    500nA @ 200V
  • Voltage - Forward (Vf) (Max) @ If
    1.3V @ 3A
  • Case Connection
    ISOLATED
  • Operating Temperature - Junction
    -65°C~200°C
  • Output Current-Max
    1A
  • Forward Voltage
    1.3V
  • Max Reverse Voltage (DC)
    200V
  • Average Rectified Current
    1A
  • Reverse Recovery Time
    2 μs
  • Peak Reverse Current
    500nA
  • Max Repetitive Reverse Voltage (Vrrm)
    200V
  • Peak Non-Repetitive Surge Current
    30A
  • Radiation Hardening
    Yes
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
1N5614US Overview
Devices like this have an average rectified current of 1A volts.Output current maximum is 1A.On the data sheets, the peak reverse is indicated by the data chart as 500nA.

1N5614US Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 500nA


1N5614US Applications
There are a lot of Microsemi Corporation
1N5614US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N5614US More Descriptions
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 200V V(RRM), Silicon
Rectifier Diode Switching 200V 1A 2000ns 2-Pin A-MELF Bag
Std Rectifier _ A-Body Sq. Melf
Diode Standard Recovery 200V 1A 2-Pin Case A Bag
1N5614US Series 1.3 V 1 A SMT Standard Recovery Glass Rectifier - D-5A
1N5614US -- Local Stock w/CERTS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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