1N5550US

Microsemi Corporation 1N5550US

Part Number:
1N5550US
Manufacturer:
Microsemi Corporation
Ventron No:
2827819-1N5550US
Description:
DIODE GEN PURP 200V 3A D5B
ECAD Model:
Datasheet:
1N5550US

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Specifications
Microsemi Corporation 1N5550US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N5550US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    7 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, B
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    1997
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Technology
    AVALANCHE
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    1μA @ 200V
  • Voltage - Forward (Vf) (Max) @ If
    1.2V @ 9A
  • Case Connection
    ISOLATED
  • Forward Current
    5A
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    5A
  • Application
    POWER
  • Forward Voltage
    1.2V
  • Max Reverse Voltage (DC)
    200V
  • Average Rectified Current
    3A
  • Number of Phases
    1
  • Reverse Recovery Time
    2 μs
  • Peak Reverse Current
    1μA
  • Max Repetitive Reverse Voltage (Vrrm)
    200V
  • Peak Non-Repetitive Surge Current
    100A
  • Radiation Hardening
    Yes
  • RoHS Status
    Non-RoHS Compliant
Description
1N5550US Overview
A rectified current of 3A volts is averaged for this device.A value of 5A is the maximum forward current that can be allowed.Phase diode rectifier is possible to produce a maximum output current by setting the output current to 5A.As indicated by the data chart in the datasheets, the peak reverse is 1μA.

1N5550US Features
an average rectified current of 3A volts
5A is the maximum value
the peak reverse is 1μA


1N5550US Applications
There are a lot of Microsemi Corporation
1N5550US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N5550US More Descriptions
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon
Std Rectifier _ B-Body Sq. Melf
Diode Standard Recovery 200V 3A 2-Pin D-5B Bag
Diode Switching 200V 5A 2-Pin B-MELF Bag
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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