1N5419US

Microsemi Corporation 1N5419US

Part Number:
1N5419US
Manufacturer:
Microsemi Corporation
Ventron No:
2430532-1N5419US
Description:
DIODE GEN PURP 500V 3A D5B
ECAD Model:
Datasheet:
1N5419US

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Specifications
Microsemi Corporation 1N5419US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N5419US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    7 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    E-MELF
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    TIN LEAD
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY, METALLURGICALLY BONDED
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    1μA @ 500V
  • Voltage - Forward (Vf) (Max) @ If
    1.5V @ 9A
  • Case Connection
    ISOLATED
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    3A
  • Forward Voltage
    1.5V
  • Max Reverse Voltage (DC)
    500V
  • Average Rectified Current
    3A
  • Number of Phases
    1
  • Reverse Recovery Time
    250 ns
  • Peak Reverse Current
    1μA
  • Max Repetitive Reverse Voltage (Vrrm)
    500V
  • Peak Non-Repetitive Surge Current
    80A
  • Radiation Hardening
    Yes
  • RoHS Status
    Non-RoHS Compliant
Description
1N5419US Overview
The average rectified current for this device is 3A volts.As far as output current is concerned, 3A is the maximum.A data chart shows that the peak reverse is 1μA in the datasheets.

1N5419US Features
an average rectified current of 3A volts
3A is the maximum value
the peak reverse is 1μA


1N5419US Applications
There are a lot of Microsemi Corporation
1N5419US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N5419US More Descriptions
Diode Fast Recovery 500V 3A 2-Pin Case B Bag
DIODE GEN PURP 200V 85A DO203AB
1N5419US -- Local Stock w/CERTS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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