1N5401G

ON Semiconductor 1N5401G

Part Number:
1N5401G
Manufacturer:
ON Semiconductor
Ventron No:
2824616-1N5401G
Description:
DIODE GEN PURP 100V 3A AXIAL
ECAD Model:
Datasheet:
1N5401G

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Specifications
ON Semiconductor 1N5401G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 1N5401G.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    DO-201AA, DO-27, Axial
  • Number of Pins
    2
  • Supplier Device Package
    Axial
  • Weight
    4.535924g
  • Packaging
    Bulk
  • Published
    2000
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Voltage - Rated DC
    100V
  • Current Rating
    3A
  • Base Part Number
    1N5401
  • Polarity
    Standard
  • Element Configuration
    Single
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    10μA @ 100V
  • Output Current
    3A
  • Voltage - Forward (Vf) (Max) @ If
    1V @ 3A
  • Forward Current
    3A
  • Operating Temperature - Junction
    -65°C~150°C
  • Max Surge Current
    200A
  • Halogen Free
    Halogen Free
  • Voltage - DC Reverse (Vr) (Max)
    100V
  • Breakdown Voltage
    100V
  • Current - Average Rectified (Io)
    3A
  • Forward Voltage
    1V
  • Max Reverse Voltage (DC)
    100V
  • Average Rectified Current
    3A
  • Peak Reverse Current
    10μA
  • Max Repetitive Reverse Voltage (Vrrm)
    100V
  • Peak Non-Repetitive Surge Current
    200A
  • Reverse Voltage
    100V
  • Max Forward Surge Current (Ifsm)
    200A
  • Height
    5.3mm
  • Length
    9.5mm
  • Width
    5.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
1N5401G Overview
A reasonable reverse voltage is 100V.The average rectified current for this device is 3A volts.When the forward current reaches 3A, it is allowed.Having a current rating of 3A, it can carry an indefinite amount of current without deterioration.The maximum surge current is 200A.A data chart shows that the peak reverse is 10μA in the datasheets.Its breakdown voltage is 100V, which is the maximum reverse voltage that can be applied without exponentially increasing leakage current in the diode.

1N5401G Features
an average rectified current of 3A volts
a current rating of 3A
the peak reverse is 10μA
the breakdown voltage of a diode is 100V


1N5401G Applications
There are a lot of ON Semiconductor
1N5401G applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N5401G More Descriptions
Diode Standard Recovery Rectifier 100V 3A 2-Pin Case 267-05 Box
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD
1N5401 Series 3 A 100 V 10 uA Axial Standard Recovery Rectifier - CASE-267-05
Standard Recovery Rectifier, 100 V, 3.0 A
Standard Diode, 3A, 100V, Axial; Repetitive Peak Reverse Voltage:100V; Average Forward Current:3A; Diode Configuration:Single; Forward Voltage Max:1.1V; Reverse Recovery Time:-; Forward Surge Current:125A; No. Of Pins:2Pins Rohs Compliant: Yes |Onsemi 1N5401G.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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