Vishay Semiconductor Diodes Division 1N4150TR

Name: 1N4150TR
Brand: Vishay Semiconductor Diodes Division
SKU: 2421233-1N4150TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N4150TR

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 2421233-1N4150TR

Description:: DIODE GEN PURP 50V 300MA DO35

ECAD Model:

Datasheet:: 1N4150, FDLL4150

Specifications

Vishay Semiconductor Diodes Division 1N4150TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division 1N4150TR.

Factory Lead Time
11 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Number of Pins
2
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e2
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Silver (Sn/Ag)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
HTS Code
8541.10.00.70
Subcategory
Rectifier Diodes
Terminal Form
WIRE
Current Rating
200mA
Base Part Number
1N4150
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
100nA @ 50V
Power Dissipation
500mW
Voltage - Forward (Vf) (Max) @ If
1V @ 200mA
Case Connection
ISOLATED
Forward Current
150mA
Max Reverse Leakage Current
100nA
Operating Temperature - Junction
175°C Max
Max Surge Current
4A
Output Current-Max
0.15A
Current - Average Rectified (Io)
300mA DC
Forward Voltage
1V
Max Reverse Voltage (DC)
50V
Average Rectified Current
300mA
Reverse Recovery Time
4 ns
Peak Reverse Current
100nA
Max Repetitive Reverse Voltage (Vrrm)
50V
Capacitance @ Vr, F
2.5pF @ 0V 1MHz
Peak Non-Repetitive Surge Current
4A
Max Forward Surge Current (Ifsm)
4A
Recovery Time
4 ns
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

1N4150TR Overview
This device produces a maximal reverse leakage current of 100nA volts.There is an average rectified current of 300mA volts for this device.This electronic or electrical device produces 500mW heat as an unwanted derivative of its primary action.The allowable value of forward current reaches 150mA.Its current rating is 200mA, which is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element. 4A is the maximum value of surge current that can be used.In terms of output current, 0.15A is the maximum value.In the datasheets, the peak reverse is 100nA, as indicated by the data chart.

1N4150TR Features
a maximal reverse leakage current of 100nA volts
an average rectified current of 300mA volts
a current rating of 200mA
0.15A is the maximum value
the peak reverse is 100nA

1N4150TR Applications
There are a lot of Vishay Semiconductor Diodes Division
1N4150TR applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N4150TR More Descriptions

Diode Small Signal Switching Si 50V 0.3A Automotive 2-Pin DO-35 T/R
75V SMALL SIGNAL DIODE DO-35 1V @ 10MADiodes - General Purpose, Power, Switching Vr/50V Io/150mA T/R
DIODE, SMALL SIGNAL, 50V, DO-35; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 50V; Forward Current If(AV): 150mA; Forward Voltage VF Max: 1V; Reverse Recovery Time trr Max: 4ns; Forward Surge Current Ifsm

Certification