ON Semiconductor 1N4006G

Name: 1N4006G
Brand: ON Semiconductor
SKU: 2421436-1N4006G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N4006G

Manufacturer:: ON Semiconductor

Ventron No:: 2421436-1N4006G

Description:: DIODE GEN PURP 800V 1A AXIAL

ECAD Model:

Datasheet:: 1N4006G

Part Pictures

Specifications

ON Semiconductor 1N4006G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 1N4006G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Number of Pins
2
Supplier Device Package
Axial
Weight
4.535924g
Packaging
Bulk
Published
2005
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Voltage - Rated DC
800V
Current Rating
1A
Base Part Number
1N4006
Polarity
Standard
Element Configuration
Single
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
10μA @ 800V
Output Current
1A
Voltage - Forward (Vf) (Max) @ If
1.1V @ 1A
Forward Current
1A
Operating Temperature - Junction
-65°C~175°C
Max Surge Current
30A
Halogen Free
Halogen Free
Voltage - DC Reverse (Vr) (Max)
800V
Breakdown Voltage
800V
Current - Average Rectified (Io)
1A
Forward Voltage
1.1V
Max Reverse Voltage (DC)
800V
Average Rectified Current
1A
Peak Reverse Current
10μA
Max Repetitive Reverse Voltage (Vrrm)
800V
Peak Non-Repetitive Surge Current
30A
Reverse Voltage
800V
Max Forward Surge Current (Ifsm)
30A
Diameter
2.7mm
Height
6.35mm
Length
5.1816mm
Width
6.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

1N4006G Overview
A reasonable reverse voltage is 800V.The average rectified current for this device is 1A volts.When the forward current reaches 1A, it is allowed.Having a current rating of 1A, it can carry an indefinite amount of current without deterioration.The maximum surge current is 30A.A data chart shows that the peak reverse is 10μA in the datasheets.Its breakdown voltage is 800V, which is the maximum reverse voltage that can be applied without exponentially increasing leakage current in the diode.

1N4006G Features
an average rectified current of 1A volts
a current rating of 1A
the peak reverse is 10μA
the breakdown voltage of a diode is 800V

1N4006G Applications
There are a lot of ON Semiconductor
1N4006G applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N4006G More Descriptions

Rectifier Diode, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon, DO-41
Diode Glass Passivated Rectifier 800V 1A 2-Pin Axial DO-41
1N4006 Series 1 A 800 V Axial Lead Standard Recovery Rectifier - CASE 59-10
RECTIFIER, SINGLE, 800V, DO-204AL; Repetitive Reverse Voltage Vrrm Max: 800V; Forward Current If(AV): 1A; Diode Configuration: Single; Forward Voltage VF Max: 1.1V; Reverse Recovery Time trr Max: -; Forward Surge Current Ifsm Max: 30A; Operating Temperature Max: 175°C; Diode Case Style: DO-41 (DO-204AL); No. of Pins: 2Pins; Product Range: -; Automotive Qualification Standard: -; SVHC: Lead (27-Jun-2018)

Product Comparison

The three parts on the right have similar specifications to 1N4006G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Base Part Number

Polarity

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Output Current

Voltage - Forward (Vf) (Max) @ If

Forward Current

Operating Temperature - Junction

Max Surge Current

Halogen Free

Voltage - DC Reverse (Vr) (Max)

Breakdown Voltage

Current - Average Rectified (Io)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Reverse Voltage

Max Forward Surge Current (Ifsm)

Diameter

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Capacitance

Power Dissipation

Capacitance @ Vr, F

View Compare
1N4006G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

8 Weeks

Through Hole

DO-204AL, DO-41, Axial

2

Axial

4.535924g

Bulk

2005

Active

1 (Unlimited)

175°C

-65°C

800V

1A

1N4006

Standard

Single

Standard Recovery >500ns, > 200mA (Io)

Standard

10μA @ 800V

1A

1.1V @ 1A

1A

-65°C~175°C

30A

Halogen Free

800V

800V

1A

1.1V

800V

1A

10μA

800V

30A

800V

30A

2.7mm

6.35mm

5.1816mm

6.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-
1N4001GP

Fairchild/ON Semiconductor

-

-

Through Hole

DO-204AL, DO-41, Axial

-

DO-204AL (DO-41)

-

Tape & Reel (TR)

2003

Obsolete

1 (Unlimited)

175°C

-65°C

50V

1A

1N4001

Standard

Single

Standard Recovery >500ns, > 200mA (Io)

Standard

5μA @ 50V

1A

1.1V @ 1A

-

-55°C~175°C

30A

-

50V

-

1A

-

50V

1A

5μA

-

-

50V

-

-

-

-

-

-

-

RoHS Compliant

Lead Free

Through Hole

8pF

3W

15pF @ 4V 1MHz

1N4006G vs 1N4001GP
1N4003GP

Fairchild/ON Semiconductor

-

-

Through Hole

DO-204AL, DO-41, Axial

-

DO-204AL (DO-41)

-

Tape & Reel (TR)

2007

Obsolete

1 (Unlimited)

-

-

-

-

1N4003

-

-

Standard Recovery >500ns, > 200mA (Io)

Standard

5μA @ 200V

-

1.1V @ 1A

-

-55°C~175°C

-

-

200V

-

1A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

15pF @ 4V 1MHz

1N4006G vs 1N4003GP
1N4004GP

Fairchild/ON Semiconductor

-

-

Through Hole

DO-204AL, DO-41, Axial

-

DO-204AL (DO-41)

-

Tape & Reel (TR)

2007

Obsolete

1 (Unlimited)

-

-

-

-

1N4004

-

-

Standard Recovery >500ns, > 200mA (Io)

Standard

5μA @ 400V

-

1.1V @ 1A

-

-55°C~175°C

-

-

400V

-

1A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

15pF @ 4V 1MHz

1N4006G vs 1N4004GP